41.3.5 Memory Programming Specifications

Table 41-5. 
Standard Operating Conditions (unless otherwise stated)
Param. No.Sym.Device CharacteristicsMin.Typ. †Max.UnitsConditions
Data EEPROM Memory Specifications
MEM20EDDataEE Byte Endurance100kE/W-40°C ≤ TA ≤ +85°C
MEM21TD_RETCharacteristic Retention40YearProvided no other specifications are violated
MEM23VD_RWVDD for Read or Erase/Write operationVDDMINVDDMAXV
MEM24TD_BEWByte Erase and Write Cycle Time11ms
Program Flash Memory Specifications
MEM30EPFlash Memory Cell Endurance10kE/W-40°C ≤ TA ≤ +85°C


(Note 1)

MEM32TP_RETCharacteristic Retention40YearProvided no other specifications are violated
MEM33VP_RDVDD for Read operationVDDMINVDDMAXV
MEM34VP_REWVDD for Row Erase or Write operationVDDMINVDDMAXV
MEM35TP_REWSelf-Timed Page Writems
MEM36TSESelf-Timed Page Erasems
MEM37TP_WRDSelf-Timed Word Writeμs

† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note:
  1. Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.