3.4 AT21CS11 DC Characteristics(1)

ParameterSymbolMinimumMaximumUnitsTest Conditions
Pull-up VoltageVPUP2.74.5VHigh-Speed mode
Pull-up ResistanceRPUP0.21.8kΩVPUP = 2.7V
0.45.4kΩVPUP = 4.5V
Active Current, ReadIA10.3mAVPUP = 4.5V

SI/O = VPUP

Active Current, WriteIA20.5mAVPUP = 4.5V
Standby CurrentISB1.5µAVPUP = 2.7V(2)

SI/O = VPUP

3.0µAVPUP = 4.5V

SI/O = VPUP

Input Low Level(2,3)VIL–0.60.5V
Input High Level(2,3)VIHVPUP x 0.7VPUP + 0.5V
SI/O Hysteresis(2,3,4)VHYS0.1281.4V
Output Low LevelVOL00.4VIOL = 4 mA
Bus CapacitanceCBUS1000pF
Note:
  1. Parameters are applicable over the operating range in DC and AC Operating Range, unless otherwise noted.
  2. This parameter is characterized but is not 100% tested in production.
  3. VIH, VIL and VHYS are functions of the internal supply voltage, which is a function of VPUP, RPUP, CBUS and timing used. Use of a lower VPUP, higher RPUP, higher CBUS and shorter tRCV creates lower VIH, VIL and VHYS values.
  4. Once VIH is crossed on a rising edge of SI/O, the voltage on SI/O must drop at least by VHYS to be detected as a logic ‘0’.