3.4 AT21CS11 DC Characteristics(1)
Parameter | Symbol | Minimum | Maximum | Units | Test Conditions |
---|---|---|---|---|---|
Pull-up Voltage | VPUP | 2.7 | 4.5 | V | High-Speed mode |
Pull-up Resistance | RPUP | 0.2 | 1.8 | kΩ | VPUP = 2.7V |
0.4 | 5.4 | kΩ | VPUP = 4.5V | ||
Active Current, Read | IA1 | — | 0.3 | mA | VPUP = 4.5V SI/O = VPUP |
Active Current, Write | IA2 | — | 0.5 | mA | VPUP = 4.5V |
Standby Current | ISB | — | 1.5 | µA | VPUP = 2.7V(2) SI/O = VPUP |
— | 3.0 | µA | VPUP = 4.5V SI/O = VPUP | ||
Input Low Level(2,3) | VIL | –0.6 | 0.5 | V | |
Input High Level(2,3) | VIH | VPUP x 0.7 | VPUP + 0.5 | V | |
SI/O Hysteresis(2,3,4) | VHYS | 0.128 | 1.4 | V | |
Output Low Level | VOL | 0 | 0.4 | V | IOL = 4 mA |
Bus Capacitance | CBUS | — | 1000 | pF |
Note:
- Parameters are applicable over the operating range in DC and AC Operating Range, unless otherwise noted.
- This parameter is characterized but is not 100% tested in production.
- VIH, VIL and VHYS are functions of the internal supply voltage, which is a function of VPUP, RPUP, CBUS and timing used. Use of a lower VPUP, higher RPUP, higher CBUS and shorter tRCV creates lower VIH, VIL and VHYS values.
- Once VIH is crossed on
a rising edge of SI/O, the voltage on SI/O must drop at least by VHYS
to be detected as a logic ‘
0
’.