35.5.1 DDR-SDRAM Controller Write Cycle
The MPDDRC provides burst access or single access in Normal mode (MPDDRC_MR.MODE = 0). Whatever the access type, the MPDDRC keeps track of the active row in each bank, thus maximizing performance.
The DDR-SDRAM device is programmed with a burst length (bl) equal to 8. This determines the length of a sequential data input by the write command that is set to 8. The latency from write command to data input depends on the memory type, as shown in the following table.
| Memory Devices | CAS Write Latency (CWL) |
|---|---|
| DDR2-SDRAM | 2/3/4 |
| DDR3-SDRAM (DLL On) | 6 |
| DDR3-SDRAM (DLL Off) | 5 |
To initiate a single access, the MPDDRC checks if the page access is already open. If row/bank addresses match with the previous row/bank addresses, the controller generates a write command. If the bank addresses are not identical or if bank addresses are identical but the row addresses are not identical, the controller generates a precharge command, activates the new row and initiates a write command. To comply with DDR-SDRAM timing parameters, additional clock cycles are inserted between precharge/active (tRP) commands and active/write (tRCD) commands. As the burst length is set to 8, in case of single access, it has to stop the burst, otherwise seven invalid values may be written. In case of the DDR-SDRAM device, the Burst Stop command is not supported for the burst write operation. So, in order to interrupt the write operation, the DM (data mask) input signal must be set to 1 to mask invalid data (see the following figures), and DQS must continue to toggle.
To initiate a burst access, the MPDDRC uses the transfer type signal provided by the host requesting the access. If the next access is a sequential write access, writing to the DDR-SDRAM device is carried out. If the next access is a write non-sequential access, then an automatic access break is inserted, the MPDDRC generates a precharge command, activates the new row and initiates a write command. To comply with DDR-SDRAM timing parameters, additional clock cycles are inserted between precharge/active (tRP) commands and active/write (tRCD) commands.
For the definition of timing parameters, see MPDDRC Timing Parameter 0 Register.
Write accesses to the DDR-SDRAM device are burst oriented and the burst length is programmed to 8. It determines the maximum number of column locations that can be accessed for a given write command. When the write command is issued, eight columns are selected. All accesses for that burst take place within these eight columns, thus the burst wraps within these eight columns if a boundary is reached. These eight columns are selected by addr[13:3]. addr[2:0] is used to select the starting location within the block.
In case of incrementing burst (INCR/INCR4/INCR8/INCR16), the addresses can cross the 16-byte boundary of the DDR-SDRAM device. For example, when a transfer (INCR4) starts at address 0x0C, the next access is 0x10, but since the burst length is programmed to 8, the next access is at 0x00. Since the boundary is reached, the burst is wrapped. The MPDDRC takes this feature of the DDR-SDRAM device into account. In case of a transfer starting at address 0x04/0x08/0x0C or starting at address 0x10/0x14/0x18/0x1C, two write commands are issued to avoid wrapping when the boundary is reached. The last write command is subject to DM input logic level. If DM is registered high, the corresponding data input is ignored and the write access is not done. This avoids additional writing.
A write command can be followed by a read command. To avoid breaking the current write burst, tWTR/tWRD (bl/2 + 2 = 6 cycles) should be met. See the figure below.