2 DEFINITION OF TERMS

Page – The minimum amount of program memory affected by an erase operation.

Row – The maximum amount of program memory that can be written in one attempt.

Bank- Bank is a logical entity that signifies a group of addresses. Each EEPROM bank can have a maximum of 255 addresses.

Erase/Write Cycle – The number of erase and write operation pairs.

Endurance – A specification indicating the maximum number of erase/write cycles and associated conditions.

Retention – A specification indicating the minimum time and associated conditions for the retention of data in Flash program memory.

Effective Endurance – The improved endurance of the emulated data EEPROM as a result of using an efficient programming algorithm.

Current (Active) Page – A page in program memory that is being written and read by the data EEPROM emulation algorithm.

Packed Page – The new current page after the pack routine (this routine is not exposed) is complete.

Page Status – Program memory locations at the beginning of the current page that store data EEPROM emulation status. The dsPIC devices use one location (address).

Maximum Data EE Size Per Bank - Maximum addresses per bank or Maximum addresses that can be stored in a flash page.