45.11 NVM Characteristics

Table 45-41. NVM Max Speed Characteristics
CPU FMAX (MHz) 0WS 1WS 2WS
VDD>2.7V 19 38 64
VDD>4.5V 20 38 64
Table 45-42. NVM Timing Characteristics
Symbol Parameter Max. Units
tFPP Page Write (1) 2.5 ms
tFRE Row erase (1) 6 ms
tFSE Chip erase (1) 260 ms
Note:
  1. These values are based on simulation, and are not covered by test or characterization. For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.
Table 45-43. Flash Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Units
RetNVM25k Retention after up to 25k Average ambient 55°C 10 50 Years
RetNVM2.5k Retention after up to 2.5k Average ambient 55°C 20 100 Years
RetNVM100 Retention after up to 100 Average ambient 55°C 25 >100 Years
CycNVM Cycling Endurance(1) -40°C < TA < 85°C 25k - Cycles
Note:
  1. An endurance cycle is a write and an erase operation.
Table 45-44. EEPROM Emulation(1) Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Units
RetEEPROM100k Retention after up to 100k Average ambient 55°C 10 50 Years
RetEEPROM10k Retention after up to 10k Average ambient 55°C 20 100 Years
CycEEPROM Cycling Endurance(2) -40°C < Ta < 85°C 100k - Cycles
Note:
  1. The EEPROM emulation is a software emulation described in the Application Note “AT03265”.
  2. An endurance cycle is a write and an erase operation.
Table 45-45. Flash erase and programming current
Symbol Parameter Typ. Units
IDDIN Maximum Current (peak) during whole programming or erase operation 10 mA