45.3.4 I/O Ports

Table 45-4.
Standard Operating Conditions (unless otherwise stated)
Param. No.	Sym.	Device Characteristics	Min.	Typ.†	Max.	Units	Conditions
Input Low-Voltage
	V_IL	I/O PORT:
D300		with LVBUF (TTL compatible)	—	—	0.75	V
D302		with Schmitt Trigger buffer	—	—	0.2 V_DD	V	2.0V ≤ V_DD ≤ 5.5V
D302A		with Schmitt Trigger buffer	—	—	0.2 V_DDIOx	V	2.0V ≤ V_DDIOx ≤ 5.5V
D303		with I²C levels	—	—	0.3 V_DD	V	2.0V ≤ V_DD ≤ 5.5V
D303A		with I²C levels	—	—	0.3 V_DDIOx	V	2.0V ≤ V_DDIOx ≤ 5.5V
D304		with SMBus 2.0	—	—	0.8	V	2.7V ≤ V_DD ≤ 5.5V
D305		with SMBus 3.0	—	—	0.8	V
D306		I3C Fast Schmitt Trigger buffer	—	—	0.3 V_DDIOx	V	1.62V ≤ V_DDIOx ≤ 3.63V
D306A		I3C Low-Voltage buffer	—	—	0.3 V_DDIOx	V	0.95V ≤ V_DDIOx ≤ 1.62V
D307		MCLR	—	—	0.2 V_DD	V
High/Low-Voltage
	V_IH	I/O PORT:
D320		with LVBUF (TTL compatible)	1.5	—	—	V
D322		with Schmitt Trigger buffer	0.8 V_DD	—	—	V	2.0V ≤ V_DD ≤ 5.5V
D322A		with Schmitt Trigger buffer	0.8 V_DDIOx	—	—	V	2.0V ≤ V_DDIOx ≤ 5.5V
D323		with I²C levels	0.7 V_DD	—	—	V	2.0V ≤ V_DD ≤ 5.5V
D323A		with I²C levels	0.7 V_DDIOx	—	—	V	2.0V ≤ V_DDIOx ≤ 5.5V
D324		with SMBus 2.0	2.1	—	—	V	2.7V ≤ V_DD ≤ 5.5V; 2.7V ≤ V_DDIOx ≤ 5.5V
D325		with SMBus 3.0	1.35	—	—	V	0°C ≤ T_A≤ +125 °C 2.5V ≤ V_DD≤ 5.5V
D325A		with SMBus 3.0	1.45	—	—	V	T_A< 0 °C V_DD < 5.5V
D326		I3C Fast Schmitt Trigger buffer	0.7 V_DDIOx	—	—	V	1.62V ≤ V_DDIOx ≤ 3.63V
D326A		I3C Low-Voltage buffer	0.7 V_DDIOx	—	—	V	0.95V ≤ V_DDIOx ≤ 1.62V
D327		MCLR	0.7 V_DD	—	—	V
Input Hysteresis
D330	V_HYS	I3C Fast Schmitt Trigger buffer	—	0.1V_DDIOx	—	V	1.62V ≤ V_DDIOx ≤ 3.63V
D331	V_HYS	I3C Low-Voltage buffer	—	0.1V_DDIOx	—	V	0.95V ≤ V_DDIOx ≤ 1.62V
Input Leakage Current⁽¹⁾
D340	I_IL	All I/O Pins (V_DD domain)	—	±5	±125	nA	V_SS ≤ V_PIN ≤ V_DD (V_DD domain); Pin at high-impedance, 85°C
D340A*		All I/O Pins (MVIO domain without I²C/SMBus Functionality)	—	±5	±125	nA	V_SS ≤ V_PIN ≤ V_DDIOx (MVIO domain); Pin at high-impedance, 85°C
D340B*		All I/O Pins (MVIO domain with I²C/SMBus Functionality)	—	±5	±125	nA	V_SS ≤ V_PIN ≤ +6.5V (MVIO domain); Pin at high-impedance, 85°C
D341		All I/O Pins (V_DD domain)	—	±5	±1000	nA	V_SS ≤ V_PIN ≤ V_DD (V_DD domain); Pin at high-impedance, 125°C
D341A*		All I/O Pins (MVIO domain without I²C/SMBus Functionality)	—	±5	±1000	nA	V_SS ≤ V_PIN ≤ V_DDIOx (MVIO domain); Pin at high-impedance, 125°C
D341B*		All I/O Pins (MVIO domain with I²C/SMBus Functionality)	—	±5	±1000	nA	V_SS ≤ V_PIN ≤ +6.5V (MVIO domain); Pin at high-impedance, 125°C
D342		MCLR⁽²⁾	—	±50	±200	nA	V_SS ≤ V_PIN ≤ V_DD, Pin at high-impedance, 85°C
Weak Pull-up Current
D350	I_PUR		80	140	200	μA	V_DD = 3.0V, V_PIN = V_SS
Output Low-Voltage
D360	V_OL	with GPIO driver (all pins on V_DD and MVIO domains)	—	—	0.6	V	I_OL = 10.0 mA, V_PIN = 3.0V
D360A*		with I3C driver (pins with I3C functionality only)	—	—	0.18	V	I_OL = 2 mA, V_PIN< 1.4V, steady for 100 μs
D360A*		with I3C driver (pins with I3C functionality only)	—	—	0.27	V	I_OL = 3 mA, V_PIN ≥ 1.4V, steady for 100 μs
Output High-Voltage
D370	V_OH	with GPIO driver (all pins on V_DD and MVIO domains)	V_DD - 0.7	—	—	V	V_PIN = 3.0V; I_OH = 6 mA
D370A*		with I3C driver (pins with I3C functionality only)	V_DD-0.18 V	—	—	V	I_OH = 2 mA, V_PIN< 1.4V, steady for 100 μs
D370A*		with I3C driver (pins with I3C functionality only)	V_DD-0.27 V	—	—	V
Load Capacitance
D380*	C_IO	All I/O Pins (V_DD and MVIO domains)	—	5	50	pF
Input Capacitance
D390*	C_I	All I/O Pins (V_DD and MVIO domains)	—	—	5	pF
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note: Negative current is defined as current sourced by the pin. The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating conditions. Higher leakage current may be measured at different input voltages.