3 Description

The AT28BV64B is a high‑performance Electrically Erasable and Programmable Read‑Only Memory (EEPROM). Its 64-Kbit memory is organized as 8,192 words by 8 bits. Manufactured with Microchip’s advanced nonvolatile CMOS technology, the device offers access times of up to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 50 µA.

The AT28BV64B is accessed like a Static RAM for read or write cycles without the need for external components. The device contains a 64‑byte page register to allow for writing up to 64 bytes simultaneously. During a write cycle, the addresses and one to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle is detected, a new access for a read or write can begin.

The AT28BV64B has additional features to ensure high quality and manufacturability. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.