1 Electrical Characteristics

Table 1-1. Absolute Maximum Ratings
PVIN to PGND–0.3V to +28V
VIN to PGND–0.3V to PVIN
VDD to PGND–0.3V to +6V
VSW, VCS to PGND−0.3V to (PVIN + 0.3V)
VBST to VSW–0.3V to +6V
VBST to PGND–0.3V to +34V
VEN to PGND−0.3V to (VDD + 0.3V)
VFB to PGND−0.3V to (VDD + 0.3V)
PGND to SGND–0.3V to +0.3V

Notes:

  1. Exceeding the absolute maximum rating may damage the device.
  2. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5kΩ in series with 100pF.
Table 1-2. Operating Ratings
Supply Voltage (PVIN, VIN)+4.5V to +26V
Output Voltage (VOUT)+0.8V to +5.5V
Bias Voltage (VDD)+4.5V to +5.5V
Enable Input (VEN)0V to VDD
Maximum Power DissipationNote 2
  1. The device is not guaranteed to function outside the operating range.
  2. PD(MAX) = (TJ(MAX) – TA)/θJA, where θJA depends upon the printed circuit layout. See the Application Information section for more information.
Table 1-3. Electrical Characteristics
PVIN = VIN =12V, VDD = 5V; VBST – VSW = 5V; TA = 25°C, unless noted. Bold values valid for −40°C ≤ TJ ≤ +125°C. (Note 1)
ParameterMin.Typ.Max.UnitsConditions
Power Supply Input
Input Voltage Range (VIN, PVIN)4.526V
VDD Bias Voltage
Operating Bias Voltage (VDD)4.555.5V
Undervoltage Lockout Trip Level2.42.73.2VVDD rising
UVLO Hysteresis 50mV
Quiescent Supply Current1.43mAVFB = 1.5V (non-switching)
Shutdown Supply Current0.72mAVDD = VBST = 5.5V, VIN = 26V, SW = unconnected, VEN = 0V
Reference
Feedback Reference Voltage0.7920.80.808V0°C ≤ TJ ≤ 85°C (±1.0%)
0.7880.80.812V−40°C ≤ TJ ≤ 125°C (±1.5%)
Load Regulation0.2%IOUT = 0A to 5A
Line Regulation0.1%VIN = 4.5V to 26V
FB Bias Current5nAVFB = 0.8V
Enable Control
EN Logic Level High1.2V

4.5V < VDD < 5.5V

EN Logic Level Low0.78V

4.5V < VDD < 5.5V

EN Bias Current50µAVEN = 0V
Oscillator
Switching Frequency225300375kHzNote 2
Maximum Duty Cycle87%Note 3, VFB = 0V
Minimum Duty Cycle0%VFB > 0.8V
Minimum Off Time360ns
Soft-Start
Soft-Start Time6ms
Short-Circuit Protection
Current Limit Threshold16AVFB = 0.8V
Short Circuit Current6AVFB = 0V
Internal FETs
Top-MOSFET RDS(ON)22.6ISW = 1A
Bottom-MOSFET RDS(ON)13.6ISW = 1A
SW Leakage Current60µAVIN = 26V, VSW = 26V, VEN = 0V, VBST = 31.5V
VIN Leakage Current25µAVIN = 26V, VSW = 0V, VEN = 0V, VBST = 31.5V
Thermal Protection
Overtemperature Shutdown155°CTJ rising
Overtemperature Shutdown Hysteresis10°C
  1. Specification for packaged product only.
  2. Measured in test mode.
  3. The maximum duty cycle is limited by the fixed mandatory off-time (tOFF) of typically 360ns.
Table 1-4. Temperature Specifications
ParameterSymbolMin.Typ.Max.UnitsConditions
Temperature Ranges
Junction Temperature RangeTJ–40+125°C
Maximum Junction TemperatureTJ(MAX)+150°C
Storage Temperature RangeTSTORE–65+150°C
Lead TemperatureTLEAD+260°CSoldering, 10 sec.
Package Thermal Resistances
Thermal Resistance, VQFN 28-LdθJA36°C/W