36.8 Memory Programming Specifications

Table 36-8. Memory Programming Specifications
Symbol Description Min. Typ.✝ Max. Unit Conditions
Data EEPROM Memory Specifications
ED* Data EEPROM byte endurance 100k Erase/Write cycles
tD_RET Characteristic retention 40 Year TA = 55°C
tD_CE Full EEPROM Erase time 4 ms
tD_BPW Byte/Page Write time 2 ms
tD_BPE Byte/Page Erase time 2 ms
tD_BPWE Atomic Byte/Page Write/Erase time 4 ms
Program Flash Memory Specifications
EP* Flash memory cell endurance 10k Erase/Write cycles
tP_RET Characteristic retention 40 Year TA = 55°C
VP_REW VDD for Erase/Write operation VDDMIN(1) VDDMAX V
tP_CE Chip Erase time 10 ms
tP_PE Page/Multipage Erase time 6 ms
tP_PW Page Write time 4 ms
tP_BPWE Atomic Byte/Page Write/Erase time 10 ms
tP_CE Chip Erase from UPDI on locked device 80 ms

Unless otherwise specified, data in the “Typ.” column is at TA = 25°C and VDD = 3.0V . These parameters are not tested and are for design guidance only.

* These parameters are characterized but not tested in production.

Note:
  1. The Brown-out Detector (BOD) configured with BODLEVEL0 is forced ON during Chip Erase. The erase attempt will fail if the supply voltage VDD is below VBOD for BODLEVEL0.