36.8 Memory Programming Specifications
Symbol | Description | Min. | Typ.✝ | Max. | Unit | Conditions |
---|---|---|---|---|---|---|
Data EEPROM Memory Specifications | ||||||
ED* | Data EEPROM byte endurance | 100k | — | — | Erase/Write cycles | |
tD_RET | Characteristic retention | — | 40 | — | Year | TA = 55°C |
tD_CE | Full EEPROM Erase time | — | 4 | — | ms | |
tD_BPW | Byte/Page Write time | — | 2 | — | ms | |
tD_BPE | Byte/Page Erase time | — | 2 | — | ms | |
tD_BPWE | Atomic Byte/Page Write/Erase time | — | 4 | — | ms | |
Program Flash Memory Specifications | ||||||
EP* | Flash memory cell endurance | 10k | — | — | Erase/Write cycles | |
tP_RET | Characteristic retention | — | 40 | — | Year | TA = 55°C |
VP_REW | VDD for Erase/Write operation | VDDMIN(1) | — | VDDMAX | V | |
tP_CE | Chip Erase time | — | 10 | — | ms | |
tP_PE | Page/Multipage Erase time | — | 6 | — | ms | |
tP_PW | Page Write time | — | 4 | — | ms | |
tP_BPWE | Atomic Byte/Page Write/Erase time | — | 10 | — | ms | |
tP_CE | Chip Erase from UPDI on locked device | — | 80 | — | ms | |
✝ Unless otherwise specified, data in the “Typ.” column is at TA = 25°C and VDD = 3.0V . These parameters are not tested and are for design guidance only. * These parameters are characterized but not tested in production. Note:
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