1.2 Electrical Characteristics

The following table lists the electrical characteristics of the XIFM gate driver.
Note: Conditions: VSUP = 24V and MOSFET = SiC module 5SFG 0500Z330100.
Table 1-2. Electrical Characteristics
ParameterDescriptionMin.Typ.Max.Unit
Power Supply
Supply voltageVCC to GND222427V
Supply currentWithout load808590mA
With load1340
Over-Voltage Lockout (OVLO) thresholdPrimary side27.528V
OVLO level—HI and LOSecondary side high voltage detect fault level26.5V
UVLO level—HI and LOSecondary side low voltage detect fault level16.5V
Coupling capacitancePrimary to secondary1112pF
Positive biasing VGS voltage41521
Negative biasing VGS voltage4−100
Signal I/O
Gate output voltage low2, 4−10V
Gate output voltage high2, 420V
Fault output (optical signal output)Open signal output81 (High on fault)Logic
Turn-on gate resistanceRGON61.1
Turn-off gate resistanceRGOFF61.1
Gate-emitter capacitanceCGS0nF
HV/Temperature monitor outputOpen signal output30.510kHz
Temperature range−40 °C to 150 °C20.510kHz
HV range0 to 2500V2.510kHz
MOSFET Short Protection
Desaturation (DSAT) monitor voltageBetween drain and source28.7V
Desaturation Time (TDSAT)DSAT blanking time2, 71μs
Response time after fault5000ns
Note:
  1. The preceding SiC MOSFET dependent conditions assume SiC MOSFET module 5SFG 0500Z330100 with Ciss = TBD nF; Qg = 100 nF operating at 20 kHz.
  2. Software configurable parameter.
  3. Shared between HV and temperature signals. One of them can be selected.
  4. Total (+/− VGS voltage threshold must not exceed 27V).
  5. Recommended to use ferrite core at supply input lines (Wurth Elektronik P/N 74270031 or 742700381) and shielded cable.
  6. Can be configured as per user requirement or application dependent.
  7. Hardware blanking time is set to the present value.
  8. Software configurable output fault can be set as High or Low on fault, as per requirement.