50.8.2 Embedded Flash AC Characteristics
| Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|
| Program/ Erase operation cycle time(1, 3) | Write page (512 bytes) | – | 3 | ms |
| Erase 4-Kbyte, 8-Kbyte, 16-Kbyte or 32-Kbyte block(2) | – | 155 | ms | |
| Erase sector (128-Kbyte) | – | 160 | ms | |
| Erase one plane, any size | – | 250 | ms | |
| Full chip erase (Hardware erase with erase signal), any size | – | 800 | ms | |
| Erase Suspend/Resume(3) | Suspend Erase command to Suspended Erase | – | 50 | μs |
| Write Suspend/Resume(3) | Suspend Write command to Suspended Write | – | 20 | μs |
| Clear GPNVM or Lock bits(3) | – | – | 150 | ms |
| Set GPNVM or Lock bits(3) | – | – | 200 | μs |
| Set Security bit(3) | – | – | 150 | ms |
| Hardware Erase signal assertion time | Time needed to start a full Flash erase operation | 1 | 20 | ms |
| Data retention | Not powered or powered @ 85°C | 10 | – | years |
| Not powered or powered @ 25°C | 20 | – | ||
| Endurance | Write/Erase cycles per page, block or sector @ 85°C | – | 100K | cycles |
Note:
- Page from main memory or user signature array.
- Same Erase time due to parallel erase of blocks.
- Simulation data.