2.5 Testing of SiC Discrete MOSFET

The ASD2-EVAL-001 Evaluation Board is used to test and characterize 650V, 700V, 900V, and 1200V TO-247 packages with 3-pin and 4-pin SiC MOSFETs. Microchip SiC devices are available at: Microchip SiC Devices.

The following figure shows the mounting of 3-pin and 4-pin devices at the High-Side and Low-Side of the evaluation board. When testing devices in a TO-247 3-pin package, the board must be modified by mounting R98 and R99 resistors (0Ω).
Note: Microchip recommends mounting the same package on the High-Side and Low-Side (3-pin/4-pin) during the characterization.
Figure 2-13. Placement of SiC Discrete MOSFET
The ASD2-EVAL-001 Evaluation Board offers two options for current monitoring:
  1. Rogowski Coil
  2. Shunt Resistor
Measurement with the Shunt Resister is possible through the BNC connector J8. However, this is not isolated on the board and it is recommended to isolate the oscilloscope channel.
The following figure shows the placement of the Rogowski Coil and BNC connector J8. The Rogowski Coil option can be used to measure the current flowing through the Drain of the High-Side device and the Source of the Low-Side device.
Figure 2-14. Current Sensing Options