39.7 NVM Characteristics

Table 39-28. Maximum Operating Frequency
VDD rangeNVM Wait StatesMaximum Operating FrequencyUnits
1.62V to 2.7V014MHz
128
240
2.7V to 3.63V024
140

Note that on this flash technology, a max number of 8 consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.

Table 39-29. Flash Endurance and Data Retention
SymbolParameterConditionsMin.Typ.Max.Units
RetNVM25kRetention after up to 25kAverage ambient 55°C1050-Years
RetNVM2.5kRetention after up to 2.5kAverage ambient 55°C20100-Years
RetNVM100Retention after up to 100Average ambient 55°C25>100-Years
CycNVMCycling Endurance(1)-40°C < Ta < 125°C25k150k-Cycles

Note: 1. An endurance cycle is a write and an erase operation.

Table 39-30. EEPROM Emulation(1) Endurance and Data Retention
SymbolParameterConditionsMin.Typ.Max.Units
RetEEPROM100kRetention after up to 100kAverage ambient 55°C1050-Years
RetEEPROM10kRetention after up to 10kAverage ambient 55°C20100-Years
CycEEPROMCycling Endurance(2)-40°C < Ta < 125°C100k600k-Cycles

Notes: 1. The EEPROM emulation is a software emulation described in the App note AT03265.

2. An endurance cycle is a write and an erase operation.