1.2 Electrical Characteristics

The following table lists the electrical characteristics of the gate driver.

Note: Conditions: V_SUP = +15V, VIN_LOGIC = 15V or 5V, Q_g = 1025 nC, V_th = 2.9V, and C_iss = 19.5 nF.


Parameter	Description	Min.	Typ.	Max.	Unit
Power Supply
Supply voltage	V_CC to GND	14	15	16	V
Supply current	Without load	—	110	—	mA
Supply current	With load³	—	—	1250	mA
UVLO level—HI and LO⁵	Primary side low voltage detect fault level	13.5	14	—	V
UVLO level—HI and LO⁵	Secondary side low voltage detect fault level³	20	—	—	V
OVLO level—HI and LO⁵	Primary side high voltage detect fault level	—	16	16.5	V
V_SOFT⁵	Two-level turn-off³	—	1.5	—	V
V_SOFTD1⁵	DSAT first level turn-off voltage³	—	9	—	V
V_SOFTD2⁵	DSAT second level turn-off voltage³	—	5	—	V
Signal I/O
Input impedance	5V—HI and LO side input	—	500	—	Ω
	15V—HI and LO side input	—	3000	—
	5V differential—HI and LO side input	—	1000	—
V_INlow	5V—turn-off threshold	—	—	1.25	V
V_INlow	15V—turn-off threshold	—	—	4	V
V_IN high	5V—turn-on threshold	3.5	—	—	V
V_IN high	15V—turn-on threshold	10	—	—	V
V_IN(differential option)	Difference between V_IN+ to V_IN-	2	—	—	V
Gate output voltage low³	—	-6	—	-4	V
Gate output voltage high³	—	17	—	21	V
Fault output voltage	Fault lines are open collect with 5 mA load	0.3	—	—	V
Fault output current⁴	—	—	—	10	mA
Switching frequency²	—	—	—	200	kHz
DC link and temperature monitoring	High Voltage (HV) and temp monitoring output	0	—	5	V
DC link and temperature monitoring	PWM frequency	—	31.5	—	kHz
DC link and temperature monitoring	Output impedance	—	510 1%	—	Ω
DC link voltage	—	880	—	920	V
Temperature trip	—	—	125	—	°C
MOSFET Short Protection
Desat monitor voltage⁵	Between drain and sink of MOSFET³	—	8.25	—	V
T_DSAT⁵	Activation after MOSFET turn-on	—	1.5	—	μs
Response time after fault	—	—	—	200	ns

Note:

The input signal must not be activated until 20 ms after power is applied to allow the on-board DC-DC converter to stabilize.
The actual maximum switching frequency is a function of gate capacitance.
Dependent on SiC MOSFET with Q_g = 1025 nC, V_th = 2.9V, and C_iss = 19.5 nF.
Fault lines are open collector and require a pull-up resistor, 2 kΩ recommended.
Software configurable parameter.

Temperature and High Voltage PWM Monitoring: The gate driver provides two 31.5 kHz, 5V PWM output signals that monitor the thermistor temperature (non-isolated) and the DC link voltage (isolated) (high-side drain to low-side source) of the SiC MOSFET power module. The PWM signals have an output impedance of 510Ω. When combined with an external low-pass filter, these signals represent a real-time, isolated voltage for both high voltage and thermistor temperature. A sallen-key active low-pass filter can be used with these outputs, as shown in the following figure with a 2 kHz cut-off frequency. The cut-off frequency is optimized for your application. For simplicity, a simple RC low-pass filter with a 100 Hz cut-off frequency is also used.

The following figure shows an example of external 2 kHz low-pass filter.

Figure 1-1. Example of External 2 kHz Low-Pass Filter