4.5.3 EEPROM Cell Performance Characteristics
| Operation | Test Condition | Min. | Max. | Units |
|---|---|---|---|---|
| Write Endurance(1, 2) | TA = +25°C, VCC = 5.5V, Page Write mode | 1,000,000 | — | Write Cycles |
| Data Retention(1) | TA = +55°C | 100 | — | Years |
Note:
- Performance is determined through characterization and the qualification process.
- Due to the memory array architecture, the write cycle endurance is specified for write operations in groups of four data bytes. The beginning of any 4-byte boundaries can be determined by multiplying any integer (N) by four (i.e., 4*N). The end address can be found by adding three to the beginning value (i.e., 4*N+3).