34.11 NVM Characteristics

Table 34-29. Maximum Operating Frequency
V_DD range	NVM Wait States		Maximum Operating Frequency	Units
2.7V to 3.63V	0		20	MHz
2.7V to 3.63V	1		32	MHz

Note: On this Flash technology, a maximum number of 8 consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.

Table 34-30. Flash Endurance and Data Retention
Symbol	Parameter	Conditions		Min.	Typ.	Max.	Units
Ret_NVM25k	Retention after up to 25k cycles	Average ambient 55°C		10	50	-	Years
Ret_NVM2.5k	Retention after up to 2.5k cycles	Average ambient 55°C		20	100	-	Years
Ret_NVM100	Retention after up to 100 cycles	Average ambient 55°C		25	>100	-	Years
Cyc_NVM	Cycling Endurance⁽¹⁾	-40°C < Ta < 125°C		25k	-	-	Cycles

Note:

An endurance cycle is a write and an erase operation.

Table 34-31. EEPROM Emulation⁽¹⁾ Endurance and Data Retention
Symbol	Parameter	Conditions		Min.	Typ.	Max.	Units
Ret_EEPROM100k	Retention after up to 100k cycles	Average ambient 55°C		10	50	-	Years
Ret_EEPROM10k	Retention after up to 10k cycles	Average ambient 55°C		20	100	-	Years
Cyc_EEPROM	Cycling Endurance⁽²⁾	-40°C < Ta < 125°C		100k	-	-	Cycles

Note:

The EEPROM Emulation is a software emulation as described in the Application Note “AT03265”.
An endurance cycle is a write and an erase operation.

Table 34-32. NVM Characteristics
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
t_FPP	Page programming time	-	-	-	2.5	ms
t_FRE	Row erase time	-	-	-	6	ms
t_FCE	DSU chip erase time (CHIP_ERASE)	-	-	-	240	ms

The online versions of the documents are provided as a courtesy. Verify all content and data in the device’s PDF documentation found on the device product page.