10.1.2 Data Flash

The PIC32CM LE00/LS00/LS60 family of devices embed up to 16 KB of internal Data Flash with Write-While-Read (WWR) capability mapped at address 0x0040 0000.

The Data Flash can be programmed or erased while reading the Flash memory. It is not possible to read the Data Flash while writing or erasing the Flash.
Note: The Data Flash memory can be executable, but requires more cycles to be read which may affect system performance.

The Data Flash cannot be cached.

The Data Flash is organized into rows, where each row contains four pages.

The Data Flash has a row-erase and a page-write granularity.

CAUTION: For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.
Table 10-4. Data Flash Memory Parameters
DeviceMemory Size [KB]Number of RowsRow size [Bytes]Number of PagesPage size [Bytes]
PIC32CM5164166425625664
PIC32CM2532

(LE00/LS00 only)

832128
PIC32CM1216

(LE00/LS00 only)

41664

The Data Flash is divided into one or two regions.

Each region has a dedicated lock bit preventing from writing and erasing pages on it.

Table 10-5. Data Flash Lock Regions Parameters
DevicePIC32CM LE00PIC32CM LS00/LS60
Number of Data FLASH Lock Regions12
Regions NameData FlashSecure Data Flash/Non-Secure Data Flash
Note:
  1. Refer to the NVM Memory Organization figures in the chapter “NVMCTRL” to obtain the definitions of the different regions definition.
  2. The regions size is configured by the Boot ROM at device start-up by reading the NVM Boot Configuration Row (BOCOR). Refer to the chapter Boot ROM for additional information.