38.3.5 Memory Programming Specifications

Table 38-5. 
Standard Operating Conditions (unless otherwise stated)
Param
 No.Sym.Device CharacteristicsMin.Typ†Max.UnitsConditions
Data EEPROM Memory Specifications
MEM20EDDataEE Byte Endurance100k——E/W-40°C≤TA≤+85°C
MEM21TD_RETCharacteristic Retention—40—YearProvided no other specifications are violated
MEM22ND_REFTotal Erase/Write Cycles before Refresh1M10M—E/W-40°C≤ TA≤+60°C
500k-40°C≤ TA≤+85°C
MEM23VD_RWVDD for Read or Erase/Write operationVDDMIN—VDDMAXV
MEM24TD_BEWByte Erase and Write Cycle Time—4.05.0ms
Program Flash Memory Specifications
MEM30EPFlash Memory Cell Endurance10k——E/W-40°C≤Ta≤+85°C


(Note 1)

MEM32TP_RETCharacteristic Retention—40—YearProvided no other specifications are violated
MEM33VP_RDVDD for Read operationVDDMIN—VDDMAXV
MEM34VP_REWVDD for Row Erase or Write operationVDDMIN—VDDMAXV
MEM35TP_REWSelf-Timed Row Erase or Self-Timed Write—2.02.5ms

Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note:
  1. Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.