SAM D21/DA1 Family

40.10 NVM Characteristics

Table 40-37. Maximum Operating Frequency (Device Variant A)
VDD range	NVM Wait States	Maximum Operating Frequency	Units
2.7V to 3.63V	0	24	MHz
2.7V to 3.63V	1	40	MHz

Table 40-38. Maximum Operating Frequency (Device Variant B and D)
VDD range	NVM Wait States	Maximum Operating Frequency	Units
2.7V to 3.63V	0	24	MHz
2.7V to 3.63V	1	48	MHz

Note: With on this flash technology, a max number of 8 consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.

Table 40-39. Flash Endurance and Data Retention (Device Variant A)
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
Ret_NVM25k	Retention after up to 25k	Average ambient 55°C	10	50	-	Years
Ret_NVM2.5k	Retention after up to 2.5k	Average ambient 55°C	20	100	-	Years
Ret_NVM100	Retention after up to 100	Average ambient 55°C	25	>100	-	Years
Cyc_NVM	Cycling Endurance⁽¹⁾	-40°C < Ta < 125°C	10K	-	-	Cycles

Table 40-40. Flash Endurance and Data Retention (Device Variant B and D)
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
Ret_NVM25k	Retention after up to 25k	Average ambient 55°C	10	50	-	Years
Ret_NVM2.5k	Retention after up to 2.5k	Average ambient 55°C	20	100	-	Years
Ret_NVM100	Retention after up to 100	Average ambient 55°C	25	>100	-	Years
Cyc_NVM	Cycling Endurance⁽¹⁾	-40°C < Ta < 125°C	25k	-	-	Cycles

Note:

An endurance cycle is a write and an erase operation.

Table 40-41. EEPROM Emulation⁽¹⁾ Endurance and Data Retention (Device Variant A)
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
Ret_EEPROM100k	Retention after up to 100k	Average ambient 55°C	10	50	-	Years
Ret_EEPROM10k	Retention after up to 10k	Average ambient 55°C	20	100	-	Years
Cyc_EEPROM	Cycling Endurance⁽²⁾	-40°C < Ta < 125°C	40K	-	-	Cycles

Table 40-42. EEPROM Emulation⁽¹⁾ Endurance and Data Retention (Device Variant B and D)
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
Ret_EEPROM100k	Retention after up to 100k	Average ambient 55°C	10	50	-	Years
Ret_EEPROM10k	Retention after up to 10k	Average ambient 55°C	20	100	-	Years
Cyc_EEPROM	Cycling Endurance⁽²⁾	-40°C < Ta < 125°C	100k	-	-	Cycles

Note:

The EEPROM emulation is a software emulation described in the Application Note AT03265: SAM D10/D11/D20/D21/R/L/C EEPROM Emulator (EEPROM) Service.
An endurance cycle is a write and an erase operation.

Table 40-43. NVM Characteristics
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
t_FPP	Page programming time	-	-	-	2.5	ms
t_FRE	Row erase time	-	-	-	6	ms
t_FCE	DSU chip erase time (CHIP_ERASE)	-	-	-	240	ms

The online versions of the documents are provided as a courtesy. Verify all content and data in the device’s PDF documentation found on the device product page.