46.11 NVM Characteristics
Conditions | CPU Fmax (MHz) | ||||
---|---|---|---|---|---|
0WS | 1WS | 2WS | 3WS | ||
PL0 (-40/85°C) | VDDIN>1.6 V | 6 | 12 | 12 | 12 |
VDDIN>2.7 V | 7.5 | 12 | 12 | 12 | |
PL2 (-40/85°C) | VDDIN>1.6 V | 14 | 28 | 42 | 48 |
VDDIN>2.7 V | 24 | 45 | 48 | 48 |
Symbol | Timings | Max | Units |
---|---|---|---|
tFPP | Page Write(1) | 2.5 | ms |
tFRE | Row erase(1) | 6 |
Note:
- These values are based on simulation. They are not covered by production test limits or characterization.
- For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
---|---|---|---|---|---|---|
RetNVM25k | Retention after up to 25k | Average ambient 55°C | 10 | 50 | - | Years |
RetNVM2.5k | Retention after up to 2.5k | Average ambient 55°C | 20 | 100 | - | Years |
RetNVM100 | Retention after up to 100 | Average ambient 55°C | 25 | >100 | - | Years |
CycNVM | Cycling Endurance(1) | -40°C < Ta < 85°C | 25K | 100K | - | Cycles |
Note: 1. An endurance cycle is a write and an
erase operation.
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
---|---|---|---|---|---|---|
RetEE100k | Retention after up to 100k | Average ambient 55°C | 10 | 50 | - | Years |
RetEE10k | Retention after up to 10k | Average ambient 55°C | 20 | 100 | - | Years |
CycEE | Cycling Endurance(2) | -40°C < Ta < 85°C | 100K | 400K | - | Cycles |
Note:
(1) The EEPROM emulation is a software emulation described in the App note AT03265.
(2) An endurance cycle is a write and an erase operation.
Symbol | Parameter | Typ. | Units |
---|---|---|---|
IDDNVM | Maximum current (peak) during whole programming or erase operation | 10 | mA |