46.11 NVM Characteristics

Table 46-39. NVM Max Speed Characteristics
ConditionsCPU Fmax (MHz)
0WS1WS2WS3WS
PL0 (-40/85°C)VDDIN>1.6 V6121212
VDDIN>2.7 V7.5121212
PL2 (-40/85°C)VDDIN>1.6 V14284248
VDDIN>2.7 V24454848
Table 46-40. NVM Timing Characteristics
SymbolTimingsMaxUnits
tFPPPage Write(1)2.5ms
tFRERow erase(1)6
Note:
  1. These values are based on simulation. They are not covered by production test limits or characterization.
  2. For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.
Table 46-41. NVM Reliability Characteristics
SymbolParameterConditionsMin.Typ.Max.Units
RetNVM25kRetention after up to 25kAverage ambient 55°C1050-Years
RetNVM2.5kRetention after up to 2.5kAverage ambient 55°C20100-Years
RetNVM100Retention after up to 100Average ambient 55°C25>100-Years
CycNVMCycling Endurance(1)-40°C < Ta < 85°C25K100K-Cycles
Note: 1. An endurance cycle is a write and an erase operation.
Table 46-42. EEPROM Emulation(1) Reliability Characteristics
SymbolParameterConditionsMin.Typ.Max.Units
RetEE100kRetention after up to 100kAverage ambient 55°C1050-Years
RetEE10kRetention after up to 10kAverage ambient 55°C20100-Years
CycEECycling Endurance(2)-40°C < Ta < 85°C100K400K-Cycles
Note:

(1) The EEPROM emulation is a software emulation described in the App note AT03265.

(2) An endurance cycle is a write and an erase operation.

Table 46-43. Flash Erase and Programming Current
SymbolParameterTyp.Units
IDDNVMMaximum current (peak) during whole programming or erase operation10mA