Power Supply: DDRM_VDD, DDRM_VDDL, DDRM_VDDQ = 1.8 V ±0.1
V
Double Data Rate Architecture: Two Data Transfers per Clock
Cycle
CAS Latency: 3
Burst Length: 8
Bi-Directional, Differential Data Strobes (DQS and DQSN) are
Transmitted/Received with Data
Edge-Aligned with Read Data and Center-Aligned with Write
Data
DLL Aligns DQ and DQS Transitions with Clock
Differential Clock Inputs (CLK and CLKN)
Data Masks (DM) for Write Data
Commands Entered on Each Positive CLK Edge, Data and Data
Mask are Referenced to Both Edges of DQS
Auto-Refresh and Self-Refresh Modes
Precharged Power-Down and Active Power-Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
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