39.4.5 Memory Programming Specifications

Table 39-8. Memory Programming Specifications(1)
SymbolDescriptionMin.TypMax.UnitsConditions
Data EEPROM Memory Specifications
EDData EEPROM byte endurance100k——Erase/Write cycles-40°C ≤ TA ≤ +85°C
tD_RETCharacteristic retention—40—YearProvided no other violated specifications
ND_REFTotal Erase/Write cycles before refresh1M4M—Erase/Write cycles-40°C ≤ TA ≤ +85°C
tD_CEFull EEPROM Erase—10—ms
VD_RWVDD for Read or Erase/Write operationVDDMIN—VDDMAXV
tD_BEWByte and multi-byte erase—11—ms
Byte write—11—
Atomic byte erase/write—11—
Program Flash Memory Specifications
EPFlash memory cell endurance10k——Erase/Write cycles-40°C ≤ TA ≤ +85°C
tP_RETCharacteristic retention—40—YearProvided no other violated specifications
VP_RDVDD for Read operationVDDMIN—VDDMAXV
VP_REWVDD for Erase/Write operationVDD(2)—VDDMAXV
tP_PEPage Erase—10—ms
tP_CEChip Erase———ms
tP_WRDByte/Word Write—70—μs
Note:
  1. These parameters are not tested but ensured by design.
  2. During Chip Erase, the Brown-out Detector (BOD) configured with BODLEVEL0 is forced ON. If the supply voltage VDD is below VBOD for BODLEVEL0, the erase attempt will fail.