2.7 Main and Lower Power Crystal Oscillator

The tables below describes the electrical characteristics of the main and low power crystal oscillator.

Table 2-84. Electrical Characteristics of the Main Crystal Oscillator
Parameter Description Condition Min. Typ. Max. Units
Operating frequency Using external crystal 0.032 — 20 MHz
Using ceramic resonator 0.5 — 8 MHz
Using RC Network 0.032 — 4 MHz
Output duty cycle — — 50 — %
Output jitter With 10 MHz crystal — 1 — ns RMS
IDYNXTAL Operating current RC — 0.6 — mA
0.032–0.2 — 0.6 — mA
0.2–2.0 — 0.6 — mA
2.0–20.0 — 0.6 — mA
ISTBXTAL Standby current of crystal oscillator — — 10 — µA
PSRRXTAL Power supply noise tolerance — — 0.5 — Vp-p
VIHXTAL Input logic level High — 90% of VCC — — V
VILXTAL Input logic level Low — — — 10% of VCC V
Startup time RC [tested at 3.24 MHz] — 300 550 ns
0.032–0.2 [tested at 32 KHz] — 500 3,000 ms
0.2–2.0 [tested at 2 MHz] — 8 15 ms
2.0–20.0 [tested at 20 MHz] — 160 180 ns
Table 2-85. Electrical Characteristics of the Low Power Oscillator
Parameter Description Condition Min. Typ. Max. Units
Operating frequency — — 32 — KHz
Output duty cycle — — 50 — %
Output jitter — — 30 — ns RMS
IDYNXTAL Operating current 32 KHz — 10 — µA
ISTBXTAL Standby current of crystal oscillator — 2 — µA
PSRRXTAL Power supply noise tolerance — 0.5 — Vp-p
VIHXTAL Input logic level High — 90% of VCC — V
VILXTAL Input logic level Low — 10% of VCC V
Startup time Test load used: 20 pF — 2.5 — s
Test load used: 30 pF — 3.7 13 s