2.7 Main and Lower Power Crystal Oscillator

The tables below describes the electrical characteristics of the main and low power crystal oscillator.

Table 2-84. Electrical Characteristics of the Main Crystal Oscillator
ParameterDescriptionConditionMin.Typ.Max.Units
Operating frequencyUsing external crystal0.032—20MHz
Using ceramic resonator0.5—8MHz
Using RC Network0.032—4MHz
Output duty cycle——50—%
Output jitterWith 10 MHz crystal—1—ns RMS
IDYNXTALOperating currentRC—0.6—mA
0.032–0.2—0.6—mA
0.2–2.0—0.6—mA
2.0–20.0—0.6—mA
ISTBXTALStandby current of crystal oscillator——10—µA
PSRRXTALPower supply noise tolerance——0.5—Vp-p
VIHXTALInput logic level High—90% of VCC——V
VILXTALInput logic level Low———10% of VCCV
Startup timeRC [tested at 3.24 MHz]—300550ns
0.032–0.2 [tested at 32 KHz]—5003,000ms
0.2–2.0 [tested at 2 MHz]—815ms
2.0–20.0 [tested at 20 MHz]—160180ns
Table 2-85. Electrical Characteristics of the Low Power Oscillator
ParameterDescriptionConditionMin.Typ.Max.Units
Operating frequency——32—KHz
Output duty cycle——50—%
Output jitter——30—ns RMS
IDYNXTALOperating current32 KHz—10—µA
ISTBXTALStandby current of crystal oscillator—2—µA
PSRRXTALPower supply noise tolerance—0.5—Vp-p
VIHXTALInput logic level High—90% of VCC—V
VILXTALInput logic level Low—10% of VCCV
Startup timeTest load used: 20 pF—2.5—s
Test load used: 30 pF—3.713s