58.6.1.3 QSPI Timings

Timings are given in the following domains:
  • 1.8V domain: VDDIO from 1.7V to 1.95V, maximum external capacitor = 15 pF, DRV= 1, SR = 0
  • 3.3V domain: VDDIO from 3.00V to 3.6V, maximum external capacitor = 15 pF, DRV= 0, SR = 0

Table 58-20. QSPI Timings in Single Data Rate Mode(1)
Symbol Parameter Conditions Min Max Unit
QSPI0 QIOx data in to QSCK rising edge (input setup time) 3.3V domain 1.2 ns
1.8V domain 1.1 ns
QSPI1 QIOx data in to QSCK rising edge (input hold time) 3.3V domain 0.2 ns
1.8V domain 0.2 ns
QSPI2 QSCK rising edge to QIOx data out valid 3.3V domain 0 1.4 ns
1.8V domain 0 1.9 ns
QSPI3 QIOx data in to QSCK falling edge (input setup time) 3.3V domain 1.1 ns
1.8V domain 1.1 ns
QSPI4 QIOx data in to QSCK falling edge (input hold time) 3.3V domain 0.5 ns
1.8V domain 0.4 ns
QSPI5 QSCK falling edge to QIOx data out valid 3.3V domain 0 1.3 ns
1.8V domain 0 1.6 ns
Note:
  1. The data provided in this table are extracted from circuit simulation results.

In the following table:

  • tHCLK is the HCLK period.
  • k is 0.25 if fMCK = fQSCK and k=0.5 when fMCK ≥ fQSCK

Table 58-21. QSPI Timings in Double Data Rate Mode(1)
Symbol Parameter Conditions Min Max Unit
QSPI10 QIOx data in to QSCK edge (rising or falling, input setup time) 3.3V domain 1.2 ns
1.8V domain 1.4 ns
QSPI11 QIOx data in to QSCK edge (rising or falling, input hold time) 3.3V domain 0.5 ns
1.8V domain 0.4 ns
QSPI12 QSCK edge (rising or falling) to QIOx data out valid 3.3V domain k x THCLK -0.6 k x THCLK + 1.5 ns
1.8V domain k x THCLK - 0.8 k x THCLK + 2.0 ns
Note:
  1. The data provided in this table are extracted from circuit simulation results.