35.4.2 DDR2-SDRAM Initialization

The initialization sequence is generated by software. The DDR2-SDRAM devices are initialized by the following sequence:

  1. Program the memory device type in the Memory Device register (MPDDRC_MD).
  2. Program the shift sampling value in the Read Data Path register (MPDDRC_RD_DATA_PATH).
  3. Program MPDDRC_IO_CALIBR.
  4. Program features of the DDR2-SDRAM device in the Configuration register (MPDDRC_CR) (number of columns, rows, banks, CAS latency and output driver impedance control) and in the Timing Parameter 0 register/Timing Parameter 1 register (MPDDRC_TPR0/1) (asynchronous timing: TRC, TRAS, etc.).
  5. A NOP command is issued to the DDR2-SDRAM. Program the NOP command in the Mode register (MPDDRC_MR). The application must configure the MODE field to 1 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to any DDR2-SDRAM address to acknowledge this command. The clocks which drive the DDR2-SDRAM device are now enabled.
  6. A pause of at least 200 μs must be observed before a signal toggle.
  7. A NOP command is issued to the DDR2-SDRAM. Program the NOP command in the MPDDRC_MR. The application must configure the MODE field to 1 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to any DDR2-SDRAM address to acknowledge this command. CKE is now driven high.
  8. An All Banks Precharge command is issued to the DDR2-SDRAM. Program All Banks Precharge command in the MPDDRC_MR. The application must configure the MODE field to 2 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to any DDR2-SDRAM address to acknowledge this command.
  9. An Extended Mode Register Set (EMRS2) cycle is issued to choose between commercial or high temperature operations. The application must configure the MODE field to 5 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to the DDR2-SDRAM to acknowledge this command. The write address must be chosen so that signal BA[1] is set to 1 and signal BA[0] is set to 0. For example: with a 16-bit, 128-Mbit, DDR2-SDRAM (12 rows, 9 columns, 4 banks), the DDR2-SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x00800000; with a 32-bit, 1-Gbit, DDR2-SDRAM (14 rows, 10 columns, 8 banks), the SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x08000000.
    Note: This address is given as an example only. The real address depends on implementation in the product.
  10. An Extended Mode Register Set (EMRS3) cycle is issued to set the Extended Mode register to 0. The application must configure the MODE field to 5 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to the DDR2-SDRAM to acknowledge this command. The write address must be chosen so that signal BA[1] is set to 1 and signal BA[0] is set to 1. For example: with a 16-bit, 128-Mbit, DDR2-SDRAM (12 rows, 9 columns, 4 banks), the DDR2-SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x00C00000; with a 32-bit, 1-Gbit, DDR2-SDRAM (14 rows, 10 columns, 8 banks), the SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x0C000000
  11. An Extended Mode Register Set (EMRS1) cycle is issued to enable DLL and to program D.I.C. (Output Driver Impedance Control). The application must configure the MODE field to 5 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to the DDR2-SDRAM to acknowledge this command. The write address must be chosen so that signal BA[1] is set to 0 and signal BA[0] is set to 1. For example: with a 16-bit, 128-Mbit, DDR2-SDRAM (12 rows, 9 columns, 4 banks), the DDR2-SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x00400000; with a 32-bit, 1-Gbit, DDR2-SDRAM (14 rows, 10 columns, 8 banks), the SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x04000000.
  12. An additional 200 cycles of clock are required for locking DLL.
  13. Write a ‘1’ to the DLL bit (enable DLL reset) in the Configuration register (MPDDRC_CR).
  14. A Mode Register Set (MRS) cycle is issued to reset DLL. The application must configure the MODE field to 3 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to the DDR2-SDRAM to acknowledge this command. The write address must be chosen so that signals BA[1:0] are set to 0. For example, the SDRAM write access should be done at the address: BASE_ADDRESS_DDR.
  15. An All Banks Precharge command is issued to the DDR2-SDRAM. Program the All Banks Precharge command in the MPDDRC_MR. The application must configure the MODE field to 2 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to any DDR2-SDRAM address to acknowledge this command.
  16. Two auto-refresh (CBR) cycles are provided. Program the Auto-refresh command (CBR) in the MPDDRC_MR. The application must configure the MODE field to 4 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to any DDR2-SDRAM location twice to acknowledge these commands. TRFC must be checked between two auto-refreshes (see MPDDRC_TPR1).
  17. Write a ‘0’ to the DLL bit (disable DLL reset) in the MPDDRC_CR.
  18. A Mode Register Set (MRS) cycle is issued to program parameters of the DDR2-SDRAM device, in particular CAS latency and to disable DLL reset. The application must configure the MODE field to 3 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to the DDR2-SDRAM to acknowledge this command. The write address must be chosen so that signals BA[1:0] are set to 0. For example: with a 16-bit, 128-Mbit, DDR2-SDRAM (12 rows, 9 columns, 4 banks) bank address, the SDRAM write access should be done at the address: BASE_ADDRESS_DDR; with a 32-bit, 1-Gbit, DDR2-SDRAM (14 rows, 10 columns, 8 banks), the SDRAM write access should be done at the address: BASE_ADDRESS_DDR.
  19. Configure the OCD field (default OCD calibration) to 7 in the MPDDRC_CR.
  20. An Extended Mode Register Set (EMRS1) cycle is issued to the default OCD value. The application must configure the MODE field to 5 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to the DDR2-SDRAM to acknowledge this command. The write address must be chosen so that signal BA[1] is set to 0 and signal BA[0] is set to 1. For example: with a 16-bit, 128-Mbit, DDR2-SDRAM (12 rows, 9 columns, 4 banks), the DDR2-SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x00400000; with a 32-bit, 1-Gbit, DDR2-SDRAM (14 rows, 10 columns, 8 banks), the SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x04000000.
  21. Configure the OCD field (exit OCD calibration mode) to 0 in the MPDDRC_CR.
  22. An Extended Mode Register Set (EMRS1) cycle is issued to enable OCD exit. The application must configure the MODE field to 5 in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to the DDR2-SDRAM to acknowledge this command. The write address must be chosen so that signal BA[1] is set to 0 and signal BA[0] is set to 1. For example: with a 16-bit, 128-Mbit, DDR2-SDRAM (12 rows, 9 columns, 4 banks) bank address, the DDR2-SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x00400000; with a 32-bit, 1-Gbit, DDR2-SDRAM (14 rows, 10 columns, 8 banks), the SDRAM write access should be done at the address: BASE_ADDRESS_DDR + 0x04000000.
  23. A Normal Mode command is provided. Program the Normal mode in the MPDDRC_MR. Read the MPDDRC_MR and add a memory barrier assembler instruction just after the read. Perform a write access to any DDR2-SDRAM address to acknowledge this command.
  24. Write the refresh rate into the COUNT field in the Refresh Timer register (MPDDRC_RTR). To compute the value, see MPDDRC Refresh Timer Register.

After initialization, the DDR2-SDRAM devices are fully functional.