2.7 Electrical Characteristics(4)

Specifications apply for VDD = 3.0V, TA = 25°C, FreqREFOSC=13.560 MHz, EN = VDD, 1 Kbps data rate, 50% duty cycle, RL50Ω load (matched).

ParameterConditionMin.Typ.Max.Units
Power Supply
Standby Supply Current, IqEN= VSS—0.051µA
Mark Supply Current ION@315 MHz, POUT = +10 dBm—11.5—mA
@433.92 MHz, POUT = +10 dBm—11.6—mA
SPACE Supply Current, IOFF@ 315 MHz—2.4—mA
@ 433.92 MHz—2.7—mA
RF Output Section and Modulation Limits:
Output Power Level, POUTFSK or ASK “Mark”@ 315 MHz(4)—10—dBm
@ 433.92 MHz(4)—10—dBm
Harmonics output for 315 MHz@630 MHz(4) 2nd harm—-53—dBc
@945 MHz(4) 3rd harm—-53—dBc

Harmonics Output for

433.92 MHz

@867.84 MHz(4) 2nd harm—-51—dBc
@1301.76 MHz(4) 3rd harm—-65—dBc
Extinction Ratio for ASK——80—dBc
FSK Modulation
Frequency DeviationLoad capacitor = 10 pF, crystal type = HC49/U—22—kHz
Data Rate———10Kbps
ASK Modulation
Data Rate———50Kbps
Occupied Bandwidth@ 315 MHz(5)—<700—kHz
@ 433.92 MHz(5)—<1000—kHz
VCO Section
315 MHz Single Side Band Phase Noise@100 kHz from Carrier—-76—dBc/Hz
@1000 kHz from Carrier—-79—dBc/Hz
433.92 MHz Single Side Band Phase Noise@100 kHz from Carrier—-72—dBc/Hz
@1000 kHz from Carrier—-81—dBc/Hz
Reference Oscillator Section
XTLIN, XTLOUT, XTLMODPin capacitance—2—pF
External CapacitanceSee Schematic C17 and C18—18—pF
Oscillator Start-Up Time(6)Crystal:HC49S—400—µs
Digital/Control Section
Output BlankingSTDBY transition from low to high—500—µs
Digital Input (EN, ASK and FSK)High (VIH)0.8 x VDD——V
Low (VIL)——0.2xVDDV
Digital Input Leakage Current (EN, ASK and FSK Pins)High (VIH)—0.05—µA
Low (VIL)—0.05—µA
Undervoltage Lock Out (UVLO)——1.6—V
Note:
  1. Exceeding the absolute maximum rating may damage the device.
  2. The device is not guaranteed to function outside its operating ratings.
  3. Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5k in series with 100 pF.
  4. Measured using the circuit shown in the Test Circuit
  5. RBW = 100 kHz, OBW measured at -20 dBc
  6. Dependent on crystal