39.3.5 Memory Programming Specifications

Table 39-5. 
Standard Operating Conditions (unless otherwise stated)
Param
 No. Sym. Device Characteristics Min. Typ† Max. Units Conditions
Data EEPROM Memory Specifications
MEM20 ED DataEE Byte Endurance 100k E/W -40°C≤TA≤+85°C
MEM21 TD_RET Characteristic Retention 40 Year Provided no other specifications are violated
MEM22 ND_REF Total Erase/Write Cycles before Refresh 1M 10M E/W -40°C≤ TA≤+85°C
MEM23 VD_RW VDD for Read or Erase/Write operation VDDMIN VDDMAX V
MEM24 TD_BEW Byte Erase and Write Cycle Time 10 11 ms
Program Flash Memory Specifications
MEM30 EP Flash Memory Cell Endurance 10k E/W -40°C≤Ta≤+85°C


(Note 1)

MEM32 TP_RET Characteristic Retention 40 Year Provided no other specifications are violated
MEM33 VP_RD VDD for Read operation VDDMIN VDDMAX V
MEM34 VP_REW VDD for Row Erase or Write operation VDDMIN VDDMAX V
MEM35 TP_REW Self-Timed Sector Write 6 10 ms
MEM36 TSE Self-Timed Sector Erase 10 14 ms
MEM37 TP_WRD Self-Timed Word Write 50 80 μs

Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note:
  1. Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.