Table 44-30. NVM Max Speed
Characteristics | Conditions | CPU
Fmax (MHz) |
|---|
| 0WS | 1WS | 2WS |
|---|
| PL0 (-40/85°C) | VDD>1.6 V | 6 | 8 | 8 |
| VDD>2.7 V | 7.5 | 8 | 8 |
| PL2 (-40/85°C) | VDD>1.6 V | 14 | 28 | 32 |
| VDD>2.7 V | 24 | 32 | 32 |
Table 44-31. NVM Timing
Characteristics(1)| Symbol | Parameter | Max | Units |
|---|
| tFPP | Page programming time | 2.5 | ms |
| tFRE | Row erase time | 6 |
Note:
- These values are based on simulation. They are not covered
by production test limits or characterization.
For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once
this number is reached, a row erase is mandatory.
Table 44-32. Flash Endurance and Data
Retention| Symbol | Parameter | Conditions | Min. | Typ. | Units |
|---|
| RetNVM25k | Retention after up to 25k | Average ambient 55°C | 10 | 50 | Years |
| RetNVM2.5k | Retention after up to 2.5k | Average ambient 55°C | 20 | 100 | Years |
| RetNVM100 | Retention after up to 100 | Average ambient 55°C | 25 | >100 | Years |
| CycNVM | Cycling Endurance(1) | -40°C < Ta < 85°C | 25K | 100K | Cycles |
Note:
- An endurance cycle is a write and an erase operation.
Table 44-33. EEPROM Emulation(1)
Reliability Characteristics| Symbol | Parameter | Conditions | Min. | Typ. | Units |
|---|
| RetEE100k | Retention after up to 100k | Average ambient 55°C | 10 | 50 | Years |
| RetEE10k | Retention after up to 10k | Average ambient 55°C | 20 | 100 | Years |
| CycEE | Cycling Endurance(2) | -40°C < Ta < 85°C | 100K | 400K | Cycles |
Note:
- The EEPROM emulation is a software emulation described in the App note AT03265.
- An endurance cycle is a write and an erase operation.
Table 44-34. Flash Erase and Programming
Current| Symbol | Parameter | Typ. | Units |
|---|
| IDDNVM | Maximum current (peak) during whole programming or erase
operation | 10 | mA |
