44.11 NVM Characteristics

Table 44-30. NVM Max Speed Characteristics
Conditions CPU Fmax (MHz)
0WS 1WS 2WS
PL0 (-40/85°C) VDD>1.6 V 6 8 8
VDD>2.7 V 7.5 8 8
PL2 (-40/85°C) VDD>1.6 V 14 28 32
VDD>2.7 V 24 32 32
Table 44-31. NVM Timing Characteristics(1)
Symbol Parameter Max Units
tFPP Page programming time 2.5 ms
tFRE Row erase time 6
Note:
  1. These values are based on simulation. They are not covered by production test limits or characterization.

For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.

Table 44-32. Flash Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Units
RetNVM25k Retention after up to 25k Average ambient 55°C 10 50 Years
RetNVM2.5k Retention after up to 2.5k Average ambient 55°C 20 100 Years
RetNVM100 Retention after up to 100 Average ambient 55°C 25 >100 Years
CycNVM Cycling Endurance(1) -40°C < Ta < 85°C 25K 100K Cycles
Note:
  1. An endurance cycle is a write and an erase operation.
Table 44-33. EEPROM Emulation(1) Reliability Characteristics
Symbol Parameter Conditions Min. Typ. Units
RetEE100k Retention after up to 100k Average ambient 55°C 10 50 Years
RetEE10k Retention after up to 10k Average ambient 55°C 20 100 Years
CycEE Cycling Endurance(2) -40°C < Ta < 85°C 100K 400K Cycles
Note:
  1. The EEPROM emulation is a software emulation described in the App note AT03265.
  2. An endurance cycle is a write and an erase operation.
Table 44-34. Flash Erase and Programming Current
Symbol Parameter Typ. Units
IDDNVM Maximum current (peak) during whole programming or erase operation 10 mA