37.18 NVM Block (Flash, Data Flash and NVM Configuration Rows) Electrical Specifications
| Standard
operating conditions: VDDIO = AVDD = 1.8V to 5.5V (Unless
otherwise stated) Operating temperature: -40°C ≤ TA ≤ +85°C for Industrial | ||||||||
|---|---|---|---|---|---|---|---|---|
| Param. No. | Symbol | Characteristics | Min. | Typ. | Max. | Units | Conditions | |
| NVM_1 | FRETEN | Flash data retention | 20 | — | — | Yrs | Under all conditions less than the absolute maximum rating specifications | |
| NVM_3 | EP | Cell endurance (Flash erase and write operation) | 1k | — | — | Cycles | ||
| NVM_4 | High endurance Flash (Flash erase and write operation) | 10k | — | — | ||||
| NVM_7 | TFPW | Program cycle time | Word write | — | — | 150 | µs | VDD = 1.8V or VDD(min) whichever is greater |
| NVM_9 | TCE | Chip erase | — | — | 11 | ms | ||
| NVM_11 | TFEB | Page erase | — | — | 11 | ms | ||
| NVM_13 | IDDPROG | Supply current during programming | — | — | 10 | mA | VDD = 3.0V | |
| NVM_15 | IDDERASE | Supply current during NVM erase | — | — | 7 | mA | VDD = 3.0V | |
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Note:
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