37.2 Absolute Maximum Ratings

Stresses beyond those listed in this section may cause permanent damage to the device. These are stress ratings only. Functional operation of the device at these any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Table 37-1. Absolute Maximum Ratings
Parameter	Rating	Units
Ambient temperature under bias	-40 to +85	°C
Maximum junction temperature	+150	°C
Storage temperature	-60 to +150	°C
Voltage on V_DD with respect to GND	-0.3 to +6.5	V
Voltage on V_DDIO2 with respect to GND	-0.3 to +6.5	V
Voltage on AVDD with respect to GND	-0.3 to +6.5	V
Voltage on VREFA with respect to AVDD	-0.3 to (AVDD + 0.3)	V
Maximum current out of GND pins	140	mA
Maximum current into V_DD pins⁽¹⁾	250	mA
Maximum current into V_DDIO2 pins⁽¹⁾	250	mA
Maximum DC current sunk by a standard I/O pin	50	mA
Maximum total power dissipation	800	mW
ESD Qualification
Human Body Model (HBM) per JESD22-A114	2000	V
Charged Device Model (CDM) (ANSI/ESD STM 5.3.1) (All pins/Corner pins)	500 / 750	V
Note: The maximum allowable current is a function of the device’s maximum power dissipation. Power dissipation is calculated as follows: P_DIS = V_DD x {I_DD - ΣI_OH} + Σ{(V_DD - V_OH) x I_OH} + Σ(V_OL x I_OL).