1.2 Maximum Density Supported by the PolarFire SoC MSS DDR Controller
(Ask a Question)The MSS DDR Controller requires that the minimum Refresh Cycle Interval (tREFI) must be greater than 4 times the Refresh Cycle time (tRFC). The Refresh Cycle Interval is the period between successive refresh commands, and the Refresh Cycle time is the duration of a refresh operation. DDR manufacturers specify the tREFI for the DDR memory’s operating case temperature. The preceding requirements restrict the maximum supported DDR die density at higher temperatures for DDR4 and LPDDR4. This restriction does not apply to DDR3 and LPDDR3 memories.
The Refresh Cycle time is proportional to the memory die density. The following table lists the maximum supported DDR die density at different case temperatures.
Device | Maximum Die Density | |||
---|---|---|---|---|
Memory Case Temperature | −40 < Tc1 < 85 ℃ | −40 < Tc < 95 ℃ | −40 < Tc < 105 ℃ | −40 < Tc < 125 ℃ |
DDR4 | 16 Gb | 16 Gb | 8 Gb | 2 Gb |
LPDDR4 | 16 Gb | 4 Gb | 4 Gb | 4 Gb |
- Tc is the case temperature of the DDR Memory.
DDR memory vendors integrate one or more dies in a single component to create memory modules of higher density, and one can use several components to create a data width of x32. The MSS DDR controller is designed to support dual ranks for DDR4.
- The DDR memory component die size must be within the maximum die density mentioned in Table 1-1 for a given DDR operating case temperature
- More than one component or die can be used to enhance data width to up to x32 for DDR4
- Dual Channel can be used to enhance data width to up to x32 for LPDDR4
- Dual Rank is supported for DDR4
The following table lists the maximum supported memory density at different case temperatures, for the PolarFire SoC MSS DDR controller.
Device | Maximum Memory Density | |||
---|---|---|---|---|
Memory Case Temp | −40 < Tc1 < 85 ℃ | −40 < Tc < 95 ℃ | −40 < Tc < 105 ℃ | −40 < Tc < 125 ℃ |
DDR4 | 128 Gb | 128 Gb | 32 Gb | 8 Gb |
LPDDR4 | 32 Gb | 8 Gb | 8 Gb | 8 Gb |
- Tc is the case temperature of the DDR Memory.
Memory Selection Guidelines
The following examples provide the memory selection guidelines for DDR4 and LPDDR4.
- Example 1:
DDR4
Requirement: 4 GB (32 Gb) DDR4 memory at an operating case temperature (Tc) of up to 105 ℃
Guideline: A memory device that uses a 16 Gb die in 2Gx8 configuration must not be selected as the maximum supported die size at Tc = 105 ℃ is 8 Gb. Instead, you can choose one of the following options:
- Option A: Stack 2 components of DDR memory that uses 8 Gb die in 1Gx8 configuration and dual ranks
- Option B: Stack 4 components of DDR memory that uses 8 Gb die in 1Gx8 configuration and single rank
- Example 2:
LPDDR4
Requirement: 1 GB (8 Gb) LPDDR4 memory at an operating case temperature (Tc) of up to 95 ℃
Guideline: A memory device that uses 8 Gb die in a 512Mx16 configuration must not be selected as the maximum supported die size at Tc = 95 ℃ is 4 Gb. Instead, choose a device that uses 4 Gb die in 256Mx32 (two channels of 16-bit data width) to build the 8 Gb LPDDR4 memory.
Some examples of possible memory configurations are provided in the following table.
Memory Type | Configuration1 | Number of Components2 | Component Density3 | Total Data Width | Rank/Channel | Total Density |
---|---|---|---|---|---|---|
DDR4 (Twin Die) | x8 | 4 | 16 Gb | x32 | Dual Rank | 128 Gb |
DDR4 | x8 | 4 | 16 Gb | x32 | Single Rank | 64 Gb |
DDR4 | x8 | 4 | 8 Gb | x32 | Single Rank | 32 Gb |
LPDDR4 (Twin Die) | x16 | 1 | 16 Gb | x32 | Dual Channel | 32 Gb |
LPDDR4 (Twin Die) | x16 | 1 | 4 Gb | x32 | Dual Channel | 8 Gb |
- For DDR4, “Configuration” indicates the data bus width of the Chip. For LPDDR4, “Configuration” indicates the width of the channel.
- “Number of Components” indicates the quantity of memory chips needed.
- “Component Density” indicates the die size in the memory.