58.4.7 3 to 20 MHz Crystal Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| ESR | Equivalent Series Resistor | Fundamental at 3 MHz | – | – | 150 | Ohm |
| Fundamental at 8 MHz | 140 | |||||
| Fundamental at 12 MHz | 120 | |||||
| Fundamental at 16 MHz | 80 | |||||
| Fundamental at 20 MHz | 50 | |||||
| CM | Motional capacitance | Fundamental at 3 MHz | 3 | – | 8 | fF |
| Fundamental at 8–20 MHz | 1.6 | – | 8 | |||
| CSHUNT | Shunt capacitance | – | – | – | 7 | pF |
| CCRYSTAL | Allowed Crystal Capacitance Load | From crystal specification | 12.5 | – | 17.5 | pF |
| PON | Drive Level | 3 MHz | – | – | 15 | µW |
| 8 MHz | – | – | 30 | |||
| 12 MHz, 20 MHz | – | – | 50 |