58.7.7 32.768 kHz Crystal Oscillator

Table 58-44. 32.768 kHz Crystal Oscillator Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VDDBU Supply voltage range (VDDBU) VIT-(1) 3.6 V
IVDDBU Current consumption (VDDBU)(2) 3.1 μA
tSTART Startup time(2) ESR < 50 kΩ CM = 0.6 fF 3.7 s
CM = 3 fF 0.8 s
ESR < 90 kΩ CM = 0.6 fF 5.0 s
CM = 3 fF 1.0 s
fOSC Operating frequency 32.7 32.8 kHz
Duty Duty cycle 40 50 60 %
CPARA32K Internal parasitic capacitance(2) Between XIN32 and XOUT32 1.7 pF
Note:
  1. In this table, VIT- corresponds to the negative-going input threshold voltage of VDDBU POR (see the table VDDBU POR Characteristics). Operation of the device backup section is granted down to the VDDBU POR VIT- threshold.
  2. Simulation data

The 32.768 crystal oscillator supports a Bypass mode. See Input AC Characteristics.

Figure 58-35. 32.768 kHz Crystal Oscillator

CLEXT32K = 2x(CCRYSTAL – CPARA32K – CPCB / 2)

where CPCB is the single-ended (ground-referenced) parasitic capacitance of the printed circuit board (PCB) on XIN32 and XOUT32 tracks. As an example, if the crystal is specified for a 12.5 pF load, with CPCB=1 pF (on XIN32 and on XOUT32), CLEXT32K = 2 x (12.5 - 1.7 - 0.5) = 20.6 pF.

The table below summarizes recommendations for 32.768 kHz crystal selection.

Table 58-45. Recommended 32.768 kHz Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
CCRYSTAL Crystal load capacitance As specified by the crystal manufacturer 6 12.5 pF
RS Equivalent series resistor 50 90 kΩ
CM Motional capacitance 0.6 3 fF
CSHUNT Shunt capacitance 0.6 2 pF
PON Drive level 0.2 μW