46.12 NVM Characteristics

Table 46-40. NVM Max Speed Characteristics (1)
Conditions CPU Fmax (MHz)
0WS 1WS 2WS
PL0

(-40/85°C)

(-40/125°C)

VDDIO>1.62 V 6 8 8
VDDIO>2.7 V 7.5 8 8
PL2

(-40/85°C)

(-40/125°C)

VDDIO>1.62 V 14 28 32
VDDIO>2.7 V 14 32 32
Table 46-41. NVM Timing Characteristics (1)
Symbol Timings Max Units
tFPP Page Write 2.5 ms
tFRE Row erase 6
Note:
  1. For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.
Table 46-42. Flash Erase and Programming Current
Symbol Parameter Typ. Units
IDDNVM Maximum current (peak) during whole programming or erase operation 10 mA
Table 46-43. NVM Reliability Characteristics (2)
Symbol Parameter Conditions Min. Typ. Units
RetNVM25k Retention after up to 25k Average ambient 55°C 10 50 Years
RetNVM2.5k Retention after up to 2.5k Average ambient 55°C 20 100 Years
RetNVM100 Retention after up to 100 Average ambient 55°C 25 >100 Years
CycNVM Cycling Endurance(1) -40°C < Ta < 85°C

-40°C < Ta < 125°C

25K 100K Cycles
Cycling Endurance using Tamper Erase 50 100 Cycles
Note:
  1. An endurance cycle is a write and an erase operation.
  2. Reliability characteristics are given when not using tamper erase operations except if noted.