46.12 NVM Characteristics

Table 46-40. NVM Max Speed Characteristics ⁽¹⁾
	Conditions	CPU Fmax (MHz)
	Conditions	0WS	1WS	2WS
PL0 (-40/85°C) (-40/125°C)	V_DDIO>1.62 V	6	8	8
PL0 (-40/85°C) (-40/125°C)	V_DDIO>2.7 V	7.5	8	8
PL2 (-40/85°C) (-40/125°C)	V_DDIO>1.62 V	14	28	32
PL2 (-40/85°C) (-40/125°C)	V_DDIO>2.7 V	14	32	32

Table 46-41. NVM Timing Characteristics⁽¹⁾
Symbol	Timings	Max	Units
t_FPP	Page Write	2.5	ms
t_FRE	Row erase	6	ms

Note:

For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.

Table 46-42. Flash Erase and Programming Current
Symbol	Parameter	Typ.	Units
IDD_NVM	Maximum current (peak) during whole programming or erase operation	10	mA

Table 46-43. NVM Reliability Characteristics ⁽²⁾
Symbol	Parameter	Conditions	Min.	Typ.	Units
Ret_NVM25k	Retention after up to 25k	Average ambient 55°C	10	50	Years
Ret_NVM2.5k	Retention after up to 2.5k	Average ambient 55°C	20	100	Years
Ret_NVM100	Retention after up to 100	Average ambient 55°C	25	>100	Years
Cyc_NVM	Cycling Endurance⁽¹⁾	-40°C < Ta < 85°C -40°C < Ta < 125°C	25K	100K	Cycles
Cyc_NVM	Cycling Endurance using Tamper Erase	-40°C < Ta < 85°C -40°C < Ta < 125°C	50	100	Cycles

Note:

An endurance cycle is a write and an erase operation.
Reliability characteristics are given when not using tamper erase operations except if noted.

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