46.12 NVM Characteristics

Table 46-40. NVM Max Speed Characteristics (1)
ConditionsCPU Fmax (MHz)
0WS1WS2WS
PL0

(-40/85°C)

(-40/125°C)

VDDIO>1.62 V688
VDDIO>2.7 V7.588
PL2

(-40/85°C)

(-40/125°C)

VDDIO>1.62 V142832
VDDIO>2.7 V143232
Table 46-41. NVM Timing Characteristics (1)
SymbolTimingsMaxUnits
tFPPPage Write2.5ms
tFRERow erase6
Note:
  1. For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.
Table 46-42. Flash Erase and Programming Current
SymbolParameterTyp.Units
IDDNVMMaximum current (peak) during whole programming or erase operation10mA
Table 46-43. NVM Reliability Characteristics (2)
SymbolParameterConditionsMin.Typ.Units
RetNVM25kRetention after up to 25kAverage ambient 55°C1050Years
RetNVM2.5kRetention after up to 2.5kAverage ambient 55°C20100Years
RetNVM100Retention after up to 100Average ambient 55°C25>100Years
CycNVMCycling Endurance(1)-40°C < Ta < 85°C

-40°C < Ta < 125°C

25K100KCycles
Cycling Endurance using Tamper Erase 50100Cycles
Note:
  1. An endurance cycle is a write and an erase operation.
  2. Reliability characteristics are given when not using tamper erase operations except if noted.