Memory Programming Specifications

Table 1. Memory Programming Specifications⁽¹⁾
Symbol	Description	Min.	Typ	Max.	Units	Conditions
Data EEPROM Memory Specifications
E_D	Data EEPROM byte endurance	100k	—	—	Erase/Write cycles	-40°C ≤ T_A ≤ +85°C
t_{D_RET}	Characteristic retention	—	40	—	Year	Provided no other violated specifications
N_{D_REF}	Total Erase/Write cycles before refresh	1M	4M	—	Erase/Write cycles	-40°C ≤ T_A ≤ +85°C
t_{D_CE}	Full EEPROM Erase	—	10	—	ms
V_{D_RW}	V_DD for Read or Erase/Write operation	V_DDMIN	—	V_DDMAX	V
t_{D_BEW}	Byte and multi-byte erase	—	11	—	ms
	Byte write	—	11	—
	Atomic byte erase/write	—	11	—
Program Flash Memory Specifications
E_P	Flash memory cell endurance	10k	—	—	Erase/Write cycles	-40°C ≤ T_A ≤ +85°C
t_{P_RET}	Characteristic retention	—	40	—	Year	Provided no other violated specifications
V_{P_RD}	V_DD for Read operation	V_DDMIN	—	V_DDMAX	V
V_{P_REW}	V_DD for Erase/Write operation	V_DD⁽²⁾	—	V_DDMAX	V
t_{P_PE}	Page Erase	—	10	—	ms
t_{P_CE}	Chip Erase	—	—	—	ms
t_{P_WRD}	Byte/Word Write	—	70	—	μs
Notes: 1.These parameters are not tested but ensured by design. 2.During Chip Erase, the Brown-out Detector (BOD) configured with BODLEVEL0 is forced ON. If the supply voltage V_DD is below V_BOD for BODLEVEL0, the erase attempt will fail.