46.28 Flash Controller Electrical Characteristics
| AC CHARACTERISTICS | Standard Operating Conditions: VDDREG = VDDIO = AVDD 1.71V to 3.63V
(unless otherwise stated) Operating temperature: -40°C ≤ TA ≤ +85°C for Industrial | |||||||
|---|---|---|---|---|---|---|---|---|
| Param. No. | Symbol | Characteristics | Min. | Typ. | Max. | Units | Conditions | |
| NVM_1 | FRETEN | Flash Data Retention | 20 | — | — | Yrs | Under all conditions less than Absolute Maximum Ratings specifications | |
| NVM_3 | EP (2) | Cell Endurance (Flash Erase and Write Operation) (2) | 10k | — | — | Cycles | ||
| NVM_5 | FREAD (1) | Flash Read (1) | 0 Wait States | — | — | (*) | MHz | VDDIOx = 3.3V, FCR.CTRLA.AUTOWS = 0 |
| 1 Wait States | — | — | (*) | |||||
| 2 Wait States | — | — | (*) | |||||
| 0 Wait States | — | — | (*) | MHz | VDDIOx = 1.8V or VDDIO(min) whichever is greater, FCR.CTRLA.AUTOWS = 0 | |||
| 1 Wait States | — | — | (*) | |||||
| 2 Wait States | — | — | (*) | |||||
| NVM_7 | TFW | Program Cycle Time | Write Double Word | — | — | (*) | µs | Under all conditions less than Absolute Maximum Ratings specifications |
| NVM_8 | TFPP | Pre-Program Double Word | — | — | (*) | µs | ||
| NVM_9 | TCE | Erase Chip | — | — | (*) | ms | ||
| NVM_11 | TFEP | Erase Page | — | — | (*) | ms | ||
| NVM_13 | IDDPROG | Supply Current during Programming | — | — | PAI_401 | mA | VDDIOx = 3.3V | |
|
Note:
| ||||||||
