43.9 Deep Sleep Current Consumption DC Electrical Specifications

Table 43-13. Deep Sleep Current Consumption DC Electrical Specifications
DC Characteristics			Standard Operating Conditions: V_DD = 1.9V to 3.6V (unless otherwise stated) Operating Temperature: -40°C ≤ T_A ≤ +85°C for Industrial Temp -40°C ≤ T_A ≤ +125°C for Extended Temp
Param. No.	Symbol	Characteristics	V_DDIO	Typ.	Max.	Units	Conditions
BPWR_1	I_{DD_BACKUP}	MCU I_DD in Deep Sleep mode powered from V_DDIO	3.6V	0.74	8.44	µA	16K Backup RAM, T_A = 85°C
BPWR_1			3.6V	0.74	26.88	µA	16K Backup RAM, T_A = 125°C
BPWR_9			3.6V	1.17	12.69	µA	32K Backup RAM, T_A = 85°C
BPWR_9			3.6V	1.17	37.49	µA	32K Backup RAM, T_A = 125°C
Note: Typical value measured during characterization across voltage and temperature. Conditions: All GPIO are input and pulled up. All Peripherals are disabled with PMD bits and ON bits. All PB clocks are divided by 16. Configure LPRC or SOSC as LPCLK based on configuration. POSC and SOSC are disabled when not in use. Configure Flex RAM retention size as 16k or 32k based on configuration. JTAG and DSU are disconnected. RTCC and DSWDT are turned on. Entry to Deep Sleep mode is enabled and WFI instruction is executed. These parameters are characterized but not tested in manufacturing.