74.7.9 Main Crystal Oscillator
Symbol | Parameter | Conditions | Min | Max | Unit |
---|---|---|---|---|---|
VDDIN33 | Supply voltage range (VDDIN33)(1) | – | 3.0 | 3.6 | V |
IVDDIN33 | Current consumption (VDDIN33)(2) | – | – | 2.8 | mA |
tSTART | Start-up time(2) | – | 10 | ms | |
fOSC | Operating frequency range | – | 12 | 48 | MHz |
Duty | Duty cycle(2) | – | 40 | 60 | % |
CPARA | Internal parasitic capacitance(2) | Between XIN and XOUT | 1 | pF |
Note:
- This oscillator is powered by the 2.5V regulated output of the VDDOUT25 regulator, which is supplied from VDDIN33.
- Simulation data
Three sets of crystal characteristics are supported with this oscillator corresponding to three operating frequency ranges:
- Set 1: Crystal frequency is between 12 and 20 MHz. See Table 74-55.
- Set 2: Crystal frequency is between 20 and 30 MHz. See Table 74-56.
- Set 3: Crystal frequency is between 30 and 48 MHz. See Table 74-57.
When choosing a crystal, one and only one of these sets must be completely satisfied.
Symbol | Parameter | Conditions | Min | Max | Unit |
---|---|---|---|---|---|
f0 | Fundamental frequency | – | 12 | 20 | MHz |
CCRYSTAL | Load capacitance | – | 6 | 17.5 | pF |
CSHUNT | Shunt capacitance | – | – | 3 | pF |
ESR | Equivalent series resistance | – | – | 100 | Ω |
CM | Motional capacitance | – | 1.3 | 3.2 | fF |
PON | Drive level | – | 150 | – | μW |
Symbol | Parameter | Conditions | Min | Max | Unit |
---|---|---|---|---|---|
f0 | Fundamental frequency | – | 20 | 30 | MHz |
CCRYSTAL | Load capacitance | – | 6 | 12.5 | pF |
CSHUNT | Shunt capacitance | – | – | 3 | pF |
ESR | Equivalent series resistance | – | – | 100 | Ω |
CM | Motional capacitance | – | 1.3 | 3.2 | fF |
PON | Drive level | – | 300 | – | μW |
Symbol | Parameter | Conditions | Min | Max | Unit |
---|---|---|---|---|---|
f0 | Fundamental frequency | – | 30 | 48 | MHz |
CCRYSTAL | Load capacitance | – | 6 | 10 | pF |
CSHUNT | Shunt capacitance | With ESRMAX = 60Ω | – | 3 | pF |
With ESRMAX = 80Ω | – | 1 | pF | ||
ESR | Equivalent series resistance | With CSHUNT_MAX = 1 pF | – | 80 | Ω |
With CSHUNT_MAX = 3 pF | – | 60 | Ω | ||
CM | Motional capacitance | – | 1.3 | 3.2 | fF |
PON | Drive level | – | 400 | – | μW |
CLEXT = 2 x (CCRYSTAL – CPARA – CPCB / 2).
where CPCB is the single-ended (ground referenced) parasitic capacitance of the printed circuit board (PCB) on XIN and XOUT tracks. For example, if the crystal is specified for a 12.5 pF load, with CPCB=1 pF (on XIN and on XOUT), CLEXT = 2 x (12.5 - 1 - 0.5) = 22 pF.