51.31 Non-Volatile Memory Controller (NVM) Electrical Specifications

Table 51-44. Flash NVM AC Electrical Specifications
AC CHARACTERISTICS				Standard Operating Conditions: VDDREG=VDDIO=AVDD 1.71V to 3.63V (unless otherwise stated) Operating temperature: -40°C ≤ TA ≤ +85°C for Industrial
Param. No.	Symbol	Characteristics		Min.	Typ.	Max.	Units	Conditions
NVM_1	FRETEN	Flash Data Retention		20	—	—	Yrs	Under all conditions less than Absolute Maximum Ratings specifications
NVM_3	EP ⁽³⁾	Cell Endurance (Flash Erase and Write Operation)		10k	—	—	Cycles
NVM_5	FREAD ⁽¹⁾	Flash Read	0 Wait States	—	—	20	MHz	FCR.CTRLA.AUTOWS = 0, FCR.CTRLA.ADRWS = 0 ⁽²⁾
			1 Wait States	—	—	40
			2 Wait States	—	—	60
			3 Wait States	—	—	80		FCR.CTRLA.AUTOWS = 0, FCR.CTRLA.ADRWS = 1 ⁽²⁾
			4 Wait States	—	—	100
			5 Wait States	—	—	120 ⁽⁴⁾
NVM_7	TFW	Program Cycle Time	Write Double Word	—	—	20	µs	Under all conditions less than Absolute Maximum Ratings specifications
NVM_8	TFPP		Pre-Program Double Word	—	—	3.5	µs
NVM_9	TCE		Erase Chip	—	—	20	ms
NVM_11	TFEP		Erase Page	—	—	20	ms
NVM_13	IDDPROG	Supply Current during Programming		—	—	PAI_401	mA	VDDIOx = 3.3V
Note: Maximum Flash operating frequencies are given in the table above, but are limited by the Embedded Flash access time when the processor is fetching code out of it. Theses tables provide the device maximum operating frequency defined by the field FWS of the FCW CTRLA register when automatic wait states (AUTOWS) is disabled. This field defines the number of Wait states required to access the Embedded Flash Memory. When frequency is lower than FCLK_1/2, ADRWS bit of NVMCTRL CTRLA register must be set to 0. When frequency is higher or equal to FCLK_1/2, ADRWS bit of NVMCTRL CTRLA register must be set to 1. Cell Endurance is reached with Flash Pre-Programming option disabled. Enabling such option will improve the Cell Endurance but slow-down the programming time.