36.8 Memory Programming Specifications

Table 36-8. Memory Programming Specifications
Symbol	Description	Min.	Typ.✝	Max.	Unit	Conditions
Data EEPROM Memory Specifications
E_D*	Data EEPROM byte endurance	100k	—	—	Erase/Write cycles
t_{D_RET}	Characteristic retention	—	40	—	Year	T_A = 55°C
t_{D_CE}	Full EEPROM Erase time	—	4	—	ms
t_{D_BPW}	Byte/Page Write time	—	2	—	ms
t_{D_BPE}	Byte/Page Erase time	—	2	—	ms
t_{D_BPWE}	Atomic Byte/Page Write - Erase time	—	4	—	ms
Program Flash Memory Specifications
E_P*	Flash memory cell endurance	10k	—	—	Erase/Write cycles
t_{P_RET}	Characteristic retention	—	40	—	Year	T_A = 55°C
V_{P_REW}	V_DD for Erase/Write operation	V_DDMIN⁽¹⁾	—	V_DDMAX	V
t_{P_CE}	Chip Erase time	—	10	—	ms
t_{P_PE}	Page/Multipage Erase time	—	6	—	ms
t_{P_PW}	Page Write time	—	4	—	ms
t_{P_PWE}	Atomic Page Write - Erase time	—	10	—	ms
t_{P_CEUPDI}	Chip Erase from UPDI on locked device	—	80	—	ms
✝ Unless otherwise specified, data in the “Typ.” column is at T_A = 25°C and V_DD = 3.0V. These parameters are not tested and are for design guidance only. * These parameters are characterized but not tested in production. Note: The Brown-out Detector (BOD) configured with BODLEVEL0 is forced ON during Chip Erase. The erase attempt will fail if the supply voltage V_DD is below V_BOD for BODLEVEL0.

Data EEPROM Memory Specifications

E_D*

Data EEPROM byte endurance

100k

—

Erase/Write cycles

t_{D_RET}

Characteristic retention

—

40

—

Year

T_A = 55°C

t_{D_CE}

Full EEPROM Erase time

—

4

—

ms

t_{D_BPW}

Byte/Page Write time

—

2

—

ms

t_{D_BPE}

Byte/Page Erase time

—

2

—

ms

t_{D_BPWE}

Atomic Byte/Page Write - Erase time

—

4

—

ms

Program Flash Memory Specifications

E_P*

Flash memory cell endurance

10k

—

Erase/Write cycles

t_{P_RET}

Characteristic retention

—

40

—

Year

T_A = 55°C

V_{P_REW}

V_DD for Erase/Write operation

V_DDMIN⁽¹⁾

—

V_DDMAX

V

t_{P_CE}

Chip Erase time

—

10

—

ms

t_{P_PE}

Page/Multipage Erase time

—

6

—

ms

t_{P_PW}

Page Write time

—

4

—

ms

t_{P_PWE}

Atomic Page Write - Erase time

—

10

—

ms

t_{P_CEUPDI}

Chip Erase from UPDI on locked device

—

80

—

ms

✝ Unless otherwise specified, data in the “Typ.” column is at T_A = 25°C and V_DD = 3.0V. These parameters are not tested and are for design guidance only.

* These parameters are characterized but not tested in production.

Note:

The Brown-out Detector (BOD) configured with BODLEVEL0 is forced ON during Chip Erase. The erase attempt will fail if the supply voltage V_DD is below V_BOD for BODLEVEL0.