35.8 Memory Programming Specifications

Table 35-8. Memory Programming Specifications
Symbol	Description	Min.	Typ.✝	Max.	Unit	Conditions
V_{P_REW}	V_DD for Read or Erase/Write Operation	V_DDMIN	—	V_DDMAX	V
Data EEPROM Memory Specifications
E_D^*	Data EEPROM byte endurance	100k	—	—	Erase/Write cycles
t_{D_RET}	Characteristic retention	—	40	—	Year	T_A = 55°C
t_{D_CE}	Full EEPROM Erase time	—	4	—	ms
t_{D_BPW}	Byte/Page Write time	—	2	—	ms
t_{D_BPE}	Byte/Page Erase time	—	2	—	ms
t_{D_BPEW}	Atomic Byte/Page Erase/Write time	—	4	—	ms
Program Flash Memory Specifications
E_P^*	Flash memory cell endurance	10k	—	—	Erase/Write cycles
t_{P_RET}	Characteristic retention	—	40	—	Year	T_A = 55°C
t_{P_CE}	Chip Erase time	—	10	—	ms
t_{P_UPDICE}	UPDI Chip Erase time	—	50	—	ms	Flash size = 16 KB
t_{P_UPDICE}	UPDI Chip Erase time	—	70	—	ms	Flash size = 32 KB
t_{P_PE}	Page/Multipage Erase time	—	6	—	ms
t_{P_PW}	Page Write time	—	4	—	ms
t_{P_PEW}	Atomic Page Erase/Write time	—	10	—	ms
✝ Data in the “Typ.” column is at T_A = 25°C and V_DD = 3.0V, unless otherwise specified. These parameters are not tested and are for design guidance only. * These parameters are characterized but not tested in production.