43.12 Deep Sleep Current Consumption DC Electrical Specifications (125°C)

Table 43-13. Deep Sleep Current Consumption DC Electrical Specifications
DC Characteristics			Standard Operating Conditions: V_DDIO = V_DDANA 1.9V to 3.6V (unless otherwise stated) Operating Temperature: -40°C ≤ T_A ≤ +125°C for Extended Temp
Param. No.	Symbol	Characteristics	V_DDIO	Typ.⁽¹⁾	Max.	Units	Conditions
BPWR_1	I_{DD_BACKUP}⁽²⁾	MCU I_DD in Deep Sleep mode powered from V_DDIO	3.3V	1.46	18.68	µA	No backup RAM retained
BPWR_3			1.9V	1.09	13.12	µA	No backup RAM retained
BPWR_9			3.3V	1.7	30.9	µA	8 KB backup RAM retained
BPWR_11			1.9V	1.34	25.17	µA	8 KB backup RAM retained
Note: Typical value measured at 25°C and 3.3V. The test conditions are as follows: All GPIO are input and pulled up. All peripherals disabled with PMD bits. All PB clocks are divided by 16. LPRC is set as LPCLK. SOSC and POSC is disabled. CLDO configured at lowest possible voltage (VREG Trim = 0x07). DSU is disconnected. RF system is in low power configuration. DSWDT is enabled and configured for wake-up. Deep sleep entry is configured and WFI instruction is executed. 8 KB RAM WCM memory ON using WCMCFG.WCM1CFG[2:0]=`1`; WCMCFG.WCM2CFG[2:0]=`1` for powered ON, RET + NAP Mode. 8 KB RAM WCM memory OFF using WCMCFG.WCM1CFG[2:0]=`0`; WCMCFG.WCM2CFG[2:0]=`0` for powered OFF. These parameters are characterized but not tested in manufacturing.

Figure 43-10. Deep Sleep Current RAM OFF