43.4 Power Supply Electrical Specifications
AC Characteristics | Standard Operating Conditions:
VDDIO = VDDANA 1.9-3.6V (unless otherwise
stated) Operating Temperature: -40°C ≤ TA ≤ +85°C for Industrial Temp -40°C ≤ TA ≤ +125°C for Extended Temp | ||||||
---|---|---|---|---|---|---|---|
Param. No. | Symbol | Characteristics | Min. | Typ. | Max. | Units | Conditions |
REG_1 | VDDCORE_CIN |
VDDCORE (CLDO_OUT) input bypass parallel capacitor pair(5) | — | 1 | — | µF | Bulk ceramic or solid tantalum with ESR <0.5Ω. Min and max represent absolute values including cap tolerances |
— | 100 | — | nF | Ceramic XR7/X5R with ESR <0.5Ω depending on temperature | |||
REG_5 | VDD33 |
VDD33 input bypass parallel capacitor pair(5) | — | 10 | — | μF | Bulk ceramic or solid tantalum with ESR <0.5Ω(5) |
— | 100 | — | nF | Ceramic XR7/X5R with ESR <0.5Ω depending on temperature on all VDDIO pins(5) | |||
REG_6 | PMU_VDDIO | Input bypass parallel capacitor pair for the PMU power section(5) | — | 4.7 | — | μF | Bulk Ceramic or solid Tantalum with ESR <0.5Ω(5) |
REG_7 | PMU_VDDP | Input bypass parallel capacitor pair for the PMU power section(5) | — | 1 | — | μF | Bulk ceramic or solid tantalum with ESR <0.5Ω(5) |
REG_9 | VDDFLASH_CIN | VDD_FLASH bypass parallel capacitor pair(5) | — | 10 | — | μF | Bulk ceramic or solid tantalum with ESR <0.5Ω(5) |
— | 100 | — | nF | Ceramic XR7/X5R with ESR <0.5Ω depending on temperature on all VDDFLASH pins(5) | |||
REG_17 | VDDANA_CIN | VDDANA input bypass parallel capacitor pair(5) | — | 10 | — | μF | Bulk ceramic or solid tantalum with ESR <0.5Ω(5) |
— | 0.1 | — | nF | Ceramic XR7/X5R with ESR <0.5Ω | |||
REG_18 | VDDANA_LEXT | VDDANA series ferrite bead DCR (DC resistance) | — | — | 0.1 | Ω | ≥600Ω at 100 MHz |
REG_19 | Ferrite bead current Rating(1) | 100 | — | — | mA | — | |
REG_20 | BUCK_PLL_CIN | VDD bypass capacitor on the BUCK_PLL input | — | 1 | — | μF | Ceramic XR7/X5R with ESR <0.5Ω |
REG_21 | BUCK_BB_CIN | VDD bypass capacitor on the BUCK_BB input | — | 1 | — | μF | Ceramic XR7 with ESR <0.5Ω |
REG_22 | BUCK_MPA_CIN | VDD bypass capacitor on the BUCK_LPA input | — | 1 | — | μF | Ceramic XR7 with ESR <0.5Ω |
REG_23 | BUCK_LPA_CIN | VDD bypass capacitor on the BUCK_MPA input | — | 1 | — | μF | Ceramic XR7 with ESR <0.5Ω |
REG_24 | BUCK_CLDO_CIN | VDD bypass capacitor on the BUCK_CLDO input | — | 1 | — | μF | Ceramic XR7 with ESR <0.5Ω |
REG_25 | R_EXT | Bias for reference current generation | — | 30 | — | kΩ | — |
REG_27 | VSW_LEXT(2,3) | Buck Switch mode regulator inductor inductance | — | 4.7 | — | μH | Shielded inductor only |
REG_29 | Inductor DCR (DC resistance) | — | — | 0.22 | Ω | — | |
REG_31 | Inductor ISAT rating(2,6) | 250 | — | — | mA | — | |
REG_32 | VSW_CAPEXT | Buck Switch mode regulator bulk capacitor capacitance | 10 | — | — | μF | — |
REG_32A | Buck Switch mode regulator filtering capacitor capacitance | 100 | — | — | nF | — | |
REG_36 | VDDCORE | VDDCORE voltage range | 1.14 | 1.2 | 1.26 | V | MCU Active, cache and prefetch disabled while executing from Flash |
REG_37 | VDD33(4) | VDD33 input voltage range | 1.9 | 3.3 | 3.6 | V | — |
REG_39 | VDDANA(4) | VDDANA input voltage range | 1.9 | 3.3 | 3.6 | V | — |
REG_40 | VDD_PMU | PMU output voltage | 1.30 | 1.35 | 1.40 | V | PMU output voltage |
REG_43 | SVDDIO_R |
VDDIO rise ramp rate to ensure internal Power-on Reset signal | 0.03 | — | 0.11 | V/ms | Failure to meet this specification may lead to start-up or unexpected behaviors |
REG_44 | SVDDIO_F | VDDIO falling ramp rate to ensure internal Power-on Reset signal | — | — | 1.39 | V/ms | Failure to meet this specification may cause the device to not detect reset |
REG_45 | VP0R+ | Power-on Reset | — | 1.59 | — | V | VDDIO power up/Down (See Param REG43, VDDIO Ramp Rate) |
REG_45_A | VP0R- | Power-on Reset | — | 1.56 | — | V | VDDIO Power up/Down (See Param REG43, VDDIO Ramp Rate) |
REG_47 | VBOR33(4) | VDDIO BOD | — | 1.8 | — | V | — |
REG_48 | VBOR12 | BOR of the 1.2V regulator | — | 1.1 | — | V | — |
REG_48A | VZPBOR33 | Zero power BOR | 2.1 | — | — | V | Function available from 2.1V to 3.6V. Applicable for deep sleep wake-up condition. |
REG_49 | VBOR33L2H | BOR 3.3V low to high switch point | — | 1.84 | — | V | — |
REG_50 | VBOR1P2L2H | BOR 1.2V low to high switch point | — | 1.1 | — | V | — |
REG_51 | VBOD12 | VBOD12 Hysteresis | — | 10.5 | — | mV | — |
REG_52 | VBOD33 | VBOD33 Hysteresis | — | 51.6 | — | mV | — |
REG_53 | TRST(6) | External RESET valid active pulse width | — | 11 | — | µs | Minimum Reset active time to guarantee MCU Reset for the module. Reset filter circuit inside Module |
— | 2.7 | — | µs | Minimum Reset active time to guarantee MCU Reset for SoC with no Reset filter circuit | |||
Note:
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