2.2.3 Power Consumption of Various Internal Resources

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Table 2-14. Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs
Parameter	Definition	Power Supply		Device		Units
Parameter	Definition	Name	Domain	A2F060⁴	A2F500	Units
PAC1	Clock contribution of a Global Rib	VCC	1.5V	3.39	5.05	µW/MHz
PAC2	Clock contribution of a Global Spine	VCC	1.5V	1.14	2.50	µW/MHz
PAC3	Clock contribution of a VersaTile row	VCC	1.5V	1.15	1.15	µW/MHz
PAC4	Clock contribution of a VersaTile used as a sequential module	VCC	1.5V	0.12	0.12	µW/MHz
PAC5	First contribution of a VersaTile used as a sequential module	VCC	1.5V	0.07	0.07	µW/MHz
PAC6	Second contribution of a VersaTile used as a sequential module	VCC	1.5V	0.29	0.29	µW/MHz
PAC7	Contribution of a VersaTile used as a combinatorial module	VCC	1.5V	0.29	0.29	µW/MHz
PAC8	Average contribution of a routing net	VCC	1.5V	1.04	0.79	µW/MHz
PAC9	Contribution of an I/O input pin (standard dependent)	VCCxxxxIOBx/VCC	See Table 2-10 and Table 2-11
PAC10	Contribution of an I/O output pin (standard dependent)	VCCxxxxIOBx/VCC	See Table 2-12 and Table 2-13
PAC11	Average contribution of a RAM block during a read operation	VCC	1.5V	25.00		µW/MHz
PAC12	Average contribution of a RAM block during a write operation	VCC	1.5V	30.00		µW/MHz
PAC13	Dynamic Contribution for PLL	VCC	1.5V	2.60		µW/MHz
PAC15	Contribution of NVM block during a read operation (F < 33MHz)	VCC	1.5V	358.00		µW/MHz
PAC16	1st contribution of NVM block during a read operation (F > 33MHz)	VCC	1.5V	12.88		mW
PAC17	2nd contribution of NVM block during a read operation (F > 33MHz)	VCC	1.5V	4.80		µW/MHz
PAC18	Main Crystal Oscillator contribution	VCCMAINXTAL	3.3V	1.98		mW
PAC19a	RC Oscillator contribution	VCCRCOSC	3.3V	3.30		mW
PAC19b	RC Oscillator contribution	VCC	1.5V	3.00		mW
PAC20a	Analog Block Dynamic Power Contribution of the ADC	VCC33ADCx	3.3V	8.25		mW
PAC20b	Analog Block Dynamic Power Contribution of the ADC	VCC15ADCx	1.5V	3.00		mW
PAC21	Low Power Crystal Oscillator contribution	VCCLPXTAL	3.3V	33.00		µW
PAC22	MSS Dynamic Power Contribution – Running Drysthone at 100MHz¹	VCC	1.5V	67.50		mW
PAC23	Temperature Monitor Power Contribution	See Table 2-94	—	1.23		mW
PAC24	Current Monitor Power Contribution	See Table 2-93	—	1.03		mW
PAC25	ABPS Power Contribution	See Table 2-97	—	0.70		mW
PAC26	Sigma-Delta DAC Power Contribution²	See Table 2-99	—	0.58		mW
PAC27	Comparator Power Contribution	See Table 2-98	—	1.02		mW
PAC28	Voltage Regulator Power Contribution³	See Table 2-100	—	36.30		mW

Note:

For a different use of MSS peripherals and resources, refer to SmartPower.
Assumes Input = Half Scale Operation mode.
Assumes 100 mA load on 1.5V domain.
Device A2F060 is discontinued.

Table 2-15. Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs
Parameter	Definition	Power Supply		Device		Units
Parameter	Definition	Name	Domain	A2F060¹	A2F500	Units
PDC1	Core static power contribution in SoC mode	VCC	1.5V	7.80	37.95	mW
PDC2	Device static power contribution in Standby Mode	See Table 2-8	—	7.80	37.95	mW
PDC3	Device static power contribution in Time Keeping mode	See Table 2-8	3.3V	33.00	33.0	µW
PDC7	Static contribution per input pin (standard dependent contribution)	VCCxxxxIOBx/VCC	See Table 2-10 and Table 2-11.
PDC8	Static contribution per output pin (standard dependent contribution)	VCCxxxxIOBx/VCC	See Table 2-12 and Table 2-13.
PDC9	Static contribution per PLL	VCC	1.5V	2.55	2.55	mW

Note:

Device A2F060 is discontinued.

Table 2-16. eNVM Dynamic Power Consumption
Parameter	Description	Condition	Min.	Typ.	Max.	Units
eNVM System	eNVM array operating power	Idle	—	795	—	µA
		Read operation	See Table 2-14.
		Erase	—	900	—	µA
		Write	—	900	—	µA
PNVMCTRL	eNVM controller operating power	—	—	20	—	µW/MHz