49.34 NVM Block (Flash, Data Flash, NVM Configuration Rows) Electrical Specifications

Table 49-48. NVM Block Electrical Specifications
AC CHARACTERISTICS				Standard Operating Conditions: VDD = AVDD = 1.62V to 3.63V (unless otherwise stated) Operating temperature: -40°C ≤ T_A ≤ +85°C for Industrial
Param. No.	Symbol	Characteristics		Min.	Typ.		Max.		Units	Conditions
Param. No.	Symbol	Characteristics		Min.	PL0	PL2	PL0	PL2	Units	Conditions
NVM_1	FRETEN ⁽¹⁾	Flash Data Retention		20	—		—		Yrs	Under all conditions less than Absolute Maximum Ratings specifications
NVM_3	EP ⁽¹⁾	Cell Endurance (Flash Erase or Write Operation)		10K	—		—		Cycles
NVM_3A	EP ⁽¹⁾	Cell Endurance using Tamper Erase		50	—		—		Cycles
NVM_5	F_READ ^(2,4)	Flash Read	0 Wait State	—	—	—	8	11	MHz	VDD=3.3V
			1 Wait States	—	—	—	12	22
			2 Wait States	—	—	—	12	35
			3 Wait States	—	—	—	12	48
			0 Wait State	—	—	—	6	11	MHz	VDD=1.8V
			1 Wait States	—	—	—	12	22
			2 Wait States	—	—	—	12	35
			3 Wait States	—	—	—	12	48
NVM_7	T_FPW ^(3,4)	Program Cycle Time	Write Page	—	—		2.5		ms	VDD=3.3V
NVM_9	T_CE ⁽⁴⁾		Erase Chip	—	2		12		sec
NVM_11	T_FEB ^(3,4)		Erase Row	—	—		6		ms
NVM_13	IDD_PROG	Supply Current during Programming		—	—		10		mA	VDD=3.3V
Note: Reliability characteristics are given when not using tamper erase operations except if noted. Maximum FLASH operating frequencies are given in the table above, but are limited by the Embedded Flash access time when the processor is fetching code out of it. This field defines the number of Wait states required to access the Embedded Flash Memory. For this Flash technology, a maximum number of eight consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory. T_A = 25°C.