33.1 DC Characteristics

Table 33-2. Operating MIPs vs. Voltage
Characteristic	V_DD Range  (in Volts)	Temperature Range  (in °C)	Maximum MIPS dsPIC33CK512MPT608 Family
—	3.0V to 3.6V	-40°C to +85°C	100
—	3.0V to 3.6V	-40°C to +125°C	100

Table 33-3. Thermal Operating Conditions
Rating	Symbol	Min.	Typ.	Max.	Unit
Industrial Temperature Devices Operating Junction Temperature Range Operating Ambient Temperature Range	T_J T_A	-40 -40	— —	+125 +85	°C °C
Extended Temperature Devices Operating Junction Temperature Range Operating Ambient Temperature Range	T_J T_A	-40 -40	— —	+140 +125	°C °C
Power Dissipation: Internal Chip Power Dissipation: P_INT = V_DD x (I_DD – Σ I_OH)	P_D	P_INT + P_I/O			w
I/O Pin Power Dissipation: I/O = Σ ({V_DD – V_OH} x I_OH) + Σ (V_OL x I_OL)	P_D	P_INT + P_I/O			w
Maximum Allowed Power Dissipation	P_DMAX	(T_J – T_A)/θ_JA			W

Table 33-4. Thermal Packaging Characteristics
Characteristic	Symbol	Typ.	Max.	Unit	Notes
Package Thermal Resistance, 100-Pin TQFP, 12x12x1 mm	θ_JA	44.7	—	°C/W	1
Note: Junction to ambient thermal resistance, Theta-_JA (θ_JA) numbers are achieved by package simulations.

Table 33-5. Operating Voltage Specifications
Operating Conditions: 3.0V to 3.6V (unless otherwise stated)⁽¹⁾ Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Param No.	Symbol	Characteristic	Min.	Typ.	Max.	Units	Conditions
Operating Voltage
DC10	V_DD	Supply Voltage	3.0	—	3.6	V
DC11	AV_DD	Supply Voltage	Greater of: V_DD – 0.3 or 3.0	—	Lesser of: V_DD + 0.3 or 3.6	V	The difference between AV_DD supply and V_DD supply must not exceed ±300 mV at all times, including during device power-up
DC16	V_POR⁽³⁾	V_DD Start Voltage to Ensure Internal  Power-on Reset Signal	—	—	V_SS	V
DC17	SV_DD	V_DD Rise Rate to Ensure Internal Power-on Reset Signal	0.03	—	100	V/ms	0V-3V in 100 ms
BO10	V_BOR⁽³⁾	BOR Event on V_DD Transition High-to-Low⁽²⁾	2.68	2.84	2.99	V
Note: Device is functional at V_BORMIN < V_DD < V_DDMIN. Analog modules (ADC and comparators) may have degraded performance. Parameters are characterized but not tested. This parameter is not applicable to the Secure Subsystem.

Table 33-6. DC Characteristics: Operating Current (I_DD)
DC Characteristics	Run		Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Parameter No.	Typ.	Max.	Units	Conditions
Operating Current (I_DD)^(1,2)
DC20	7.76	10.7	mA	-40°C	3.3V	10 MIPS (N = 1, N2 = 5, N3 = 2, M = 50, F_VCO = 400 MHz, F_PLLO = 40 MHz)
	7.49	10	mA	+25°C
	7.82	15.5	mA	+85°C
	10.32	23.5	mA	+125°C
DC21	10.36	13.1	mA	-40°C	3.3V	20 MIPS (N = 1, N2 = 5, N3 = 1, M = 60, F_VCO = 480 MHz, F_PLLO = 280 MHz)
	10.09	12.45	mA	+25°C
	10.42	17.5	mA	+85°C
	12.89	25.5	mA	+125°C
DC22	14.54	17.45	mA	-40°C	3.3V	40 MIPS (N = 1, N2 = 3, N3 = 1, M = 60, F_VCO = 480 MHz, F_PLLO = 160 MHz)
	14.26	16.7	mA	+25°C
	14.58	22	mA	+85°C
	17.06	30	mA	+125°C
DC23	22.2	25.4	mA	-40°C	3.3V	70 MIPS (N = 1, N2 = 2, N3 = 1, M = 70, F_VCO = 560 MHz, F_PLLO = 280 MHz)
	21.91	24.9	mA	+25°C
	22.21	30.75	mA	+85°C
	24.65	37.5	mA	+125°C
DC24	27.36	30.7	mA	-40°C	3.3V	90 MIPS (N = 1, N2 = 2, N3 = 1, M = 90, F_VCO = 720 MHz, F_PLLO = 360 MHz)
	26.96	30.5	mA	+25°C
	26.68	35	mA	+85°C
	29.01	42	mA	+125°C
DC25	27.14	30.9	mA	-40°C	3.3V	100 MIPS (N = 1, N2 = 1, N3 = 1, M = 50, F_VCO = 400 MHz, F_PLLO = 400 MHz)
	26.54	30.1	mA	+25°C
	26.79	35	mA	+85°C
	29.23	42.5	mA	+125°C
Note: I_DD is primarily a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. Base Run current (I_DD) is measured as follows: Oscillator is switched to EC+PLL mode in software OSC1 pin is driven with external 8 MHz square wave with levels from 0.3V to V_DD – 0.3V OSC2 is configured as an I/O in the Configuration Words (OSCIOFNC (FOSC[2]) = `0`) FSCM is disabled (FCKSM[1:0] (FOSC[7:6]) = `01`) Watchdog Timer is disabled (FWDT[15] = `0` and WDTCONL[15] = `0`) All I/O pins (except OSC1) are configured as outputs and driving low No peripheral modules are operating or being clocked (defined PMDx bits are all ‘`1`’s) JTAG is disabled (JTAGEN (FICD[5]) = `0`) `NOP` instructions are executed in `while(1)` loop The Secure Subsystem may be configured to operate either in Sleep or Idle mode when there is no SPI communication with Host. Accordingly, add Sleep or Idle current of the Secure Subsystem for overall operating current of the device. The SPI lines used for communication must be configured as inputs and pulled up.

Table 33-7. Idle Current (I_IDLE)^(2,3)
Parameter No.	Typ.⁽¹⁾	Max.	Units	Conditions
DC40	6.41	8.47	mA	-40°C	3.3V	10 MIPS (N = 1, N2 = 5, N3 = 2, M = 50, F_VCO = 400 MHz,  F_PLLO = 40 MHz)
	6.15	7.57	mA	+25°C
	6.45	13	mA	+85°C
	8.95	22	mA	+125°C
DC41	7.31	10.1	mA	-40°C	3.3V	20 MIPS (N = 1, N2 = 5, N3 = 1,  M = 50, F_VCO = 400 MHz,  F_PLLO = 80 MHz)
	7.04	9.1	mA	+25°C
	7.36	14.75	mA	+85°C
	9.83	22.75	mA	+125°C
DC42	9.4	12.3	mA	-40°C	3.3V	40 MIPS (N = 1, N2 = 3, N3 = 1,  M = 60, F_VCO = 480 MHz,  F_PLLO = 160 MHz)
	9.13	11.2	mA	+25°C
	9.45	16.5	mA	+85°C
	11.92	25	mA	+125°C
DC43	12.39	15.3	mA	-40°C	3.3V	70 MIPS (N = 1, N2 = 2, N3 = 1,  M = 70, F_VCO = 560 MHz,  F_PLLO = 280 MHz)
	12.11	14.3	mA	+25°C
	12.43	19.75	mA	+85°C
	14.89	28.25	mA	+125°C
DC44	14.78	17.85	mA	-40°C	3.3V	90 MIPS (N = 1, N2 = 2, N3 = 1,  M = 90, F_VCO = 720 MHz,  F_PLLO = 360 MHz)
	14.5	16.9	mA	+25°C
	14.81	22.5	mA	+85°C
	17.26	29.5	mA	+125°C
DC45	14.44	17.55	mA	-40°C	3.3V	100 MIPS (N = 1, N2 = 1, N3 = 1,  M = 50, F_VCO = 400 MHz,  F_PLLO = 400 MHz)
	14.15	16.5	mA	+25°C
	14.46	22.25	mA	+85°C
	17.5	30	mA	+125°C
Note: Data in the “Typ.” column are for design guidance only and are not tested. Base Idle current (I_IDLE) is measured as follows: Oscillator is switched to EC+PLL mode in software OSC1 pin is driven with external 8 MHz square wave with levels from 0.3V to V_DD – 0.3V OSC2 is configured as an I/O in the Configuration Words (OSCIOFNC (FOSC[2]) = `0`) FSCM is disabled (FCKSM[1:0] (FOSC[7:6]) = `01`) Watchdog Timer is disabled (FWDTEN (FWDT[15]) = `0`) All I/O pins (except OSC1) are configured as outputs and driving low No peripheral modules are operating or being clocked (defined PMDx bits are all ‘`1`’s) JTAG is disabled (JTAGEN (FICD[5]) = `0`) Flash in standby with NVMSIDL (NVMCON[12]) = `1` The Secure Subsystem may be configured to operate either in Sleep or Idle mode when there is no SPI communication with Host. Accordingly, add Sleep or Idle current of the Secure Subsystem for overall Idle current of the device. The SPI lines used for communication must be configured as inputs and pulled up.

Table 33-8. DC Characteristics: Power-Down Current (I_PD)
DC Charateristics	Sleep		Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Parameter No.	Typ.⁽¹⁾	Max.	Units	Conditions
Power-Down Current (I_PD)^(2,4)
DC60	270	650	μA	-40°C	3.3V
	525	1000	μA	+25°C
	2150	7250	μA	+85°C
	7.03	18.5	mA	+125°C⁽³⁾
Note: Data in the “Typ.” column are for design guidance only and are not tested. I_PD (Sleep) current is measured as follows: CPU core is off, oscillator is configured in EC mode and External Clock is active; OSCI is driven with external square wave from rail-to-rail (EC clock overshoot/undershoot < 250 mV required) CLKO is configured as an I/O input pin in the Configuration Word All I/O pins are configured as output low MCLR = V_DD, WDT and FSCM are disabled All peripheral modules are disabled (PMDx bits are all set) The VREGS bit (RCON[8]) = `0` (i.e., core regulator is set to standby while the device is in Sleep mode) JTAG is disabled The regulators are in High-Power mode, LPWREN (VREGCON[15]) = `0`. The Secure Subsystem may be configured to operate either in Sleep or Idle mode when there is no SPI communication with Host. Accordingly, add Sleep or Idle current of the Secure Subsystem for overall Idle current of the device. The SPI lines used for communication must be configured as inputs and pulled up.

Table 33-9. Doze Current (I_DOZE)
Parameter No.	Typ.⁽¹⁾	Max	Doze Ratio	Units	Conditions
DC70	18.19	20	1:2	mA	-40°C	3.3V	70 MIPS (N = 1, N2 = 2, N3 = 1, M = 70, F_VCO = 560 MHz, F_PLLO = 280 MHz)
	12.66	15	1:128	mA	-40°C
	17.54	20.15	1:2	mA	+25°C
	12.39	14.7	1:128	mA	+25°C
	17.85	25	1:2	mA	+85°C
	12.7	20	1:128	mA	+85°C
	20.32	32.5	1:2	mA	+125°C
	16.05	28.5	1:128	mA	+125°C
DC71	22.3	25.55	1:2	mA	-40°C	3.3V	100 MIPS (N = 1, N2 = 1, N3 = 1, M = 50, F_VCO = 400 MHz, F_PLLO = 400 MHz)
	14.83	17.25	1:128	mA	-40°C
	21.86	25.05	1:2	mA	+25°C
	14.55	16.95	1:128	mA	+25°C
	22.16	30	1:2	mA	+85°C
	14.86	22	1:128	mA	+85°C
	24.62	36.5	1:2	mA	+125°C
	17.45	30	1:128	mA	+125°C
Note: Data in the “Typ.” column are for design guidance only and are not tested.

Table 33-10. DC Characteristics: Watchdog Timer Delta Current (ΔI_WDT)⁽¹⁾
DC Characteristics	Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Parameter No.	Typ.	Max.	Units	Conditions
DC61c	25	125	µA	-40°C	3.3V
DC61b	110	600	µA	+25°C
DC61a	100	600	µA	+85°C
DC61d	100	600	µA	+125°C
Note: The ΔI_WDT current is the additional current consumed when the module is enabled. This includes the LPRC/BFRC clock source current. This current should be added to the base I_PD current. All parameters are characterized but not tested during manufacturing.

Table 33-11. DC Characteristics: PWM Delta Current⁽¹⁾
DC Characteristics	Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Parameter No.	Typ.	Max.	Units	Conditions
DC100	5.96	6.6	mA	-40°C, 3.3V	PWM Output 500 kHz, PWM Input (AF_PLLO = 500 MHz), AVCO = 1000 MHz, PLLFBD = 125, APLLDIV = 2
	5.99	6.7	mA	+25°C, 3.3V
	5.92	6.9	mA	+85°C, 3.3V
	5.47	7	mA	+125°C, 3.3V
DC101	4.89	5.4	mA	-40°C, 3.3V	PWM Output 500 kHz, PWM Input (AF_PLLO = 400 MHz), AVCO = 400 MHz, PLLFBD = 50, APLLDIV = 1
	4.91	5.5	mA	+25°C, 3.3V
	4.85	5.7	mA	+85°C, 3.3V
	4.42	5.7	mA	+125°C, 3.3V
DC102	2.77	3.7	mA	-40°C, 3.3V	PWM Output 500 kHz, PWM Input (AF_PLLO = 200 MHz), AVCO = 400 MHz, PLLFBD = 50, APLLDIV = 2
	2.75	3.7	mA	+25°C, 3.3V
	2.7	3.7	mA	+85°C, 3.3V
	2.26	3.7	mA	+125°C, 3.3V
DC103	1.67	2	mA	-40°C, 3.3V	PWM Output 500 kHz, PWM Input (AF_PLLO = 100 MHz), AVCO = 400 MHz, PLLFBD = 50, APLLDIV = 4
	1.66	2.2	mA	+25°C, 3.3V
	1.63	2.3	mA	+85°C, 3.3V
	1.17	2.3	mA	+125°C, 3.3V
Note: APLL current is not included. The APLL current will be the same if more than one PWM is running. Listed delta currents are for only one PWM instance when HREN = `0` (PGxCONL[7]). All parameters are characterized but not tested during manufacturing.

Table 33-12. DC Characteristics: APLL Delta Current
DC Characteristics	Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Parameter No.	Typ.	Max.	Units	Conditions⁽¹⁾
DC110	5.93	6.6	mA	-40°C, 3.3V	AF_PLLO = 500 MHz, AVCO = 1000 MHz, PLLFBD = 125, APLLDIV = 2
	5.95	7	mA	+25°C, 3.3V
	6.15	7.6	mA	+85°C, 3.3V
	7.15	9	mA	+125°C, 3.3V
DC111	2.72	3.3	mA	-40°C, 3.3V	AF_PLLO = 400 MHz, AVCO = 400 MHz, PLLFBD = 50, APLLDIV = 1
	2.74	3.7	mA	+25°C, 3.3V
	2.92	4.3	mA	+85°C, 3.3V
	3.87	5.6		+125°C, 3.3V
DC112	1.39	2.7	mA	-40°C, 3.3V	AF_PLLO = 200 MHz, AVCO = 400 MHz, PLLFBD = 50, APLLDIV = 2
	1.49	2.7	mA	+25°C, 3.3V
	1.65	3	mA	+85°C, 3.3V
	2.6	4.4	mA	+125°C, 3.3V
DC113	0.79	1.1	mA	-40°C, 3.3V	AF_PLLO = 100 MHz, AVCO = 400 MHz, PLLFBD = 50, APLLDIV = 4
	0.84	1.4	mA	+25°C, 3.3V
	0.96	2.3	mA	+85°C, 3.3V
	1.93	3.6	mA	+125°C, 3.3V
Note: The APLL current will be the same if more than one PWM or DAC is run to the APLL clock. All parameters are characterized but not tested during manufacturing.

Table 33-13. DC Characteristics: ADC Δ Current
DC Charateristics	Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Parameter No.	Typ.	Max.	Units	Conditions
DC120	3.61	4	mA	-40°C	3.3V	T_AD = 14.3 ns (3.5 Msps conversion rate)
	3.68	4.1	mA	+25°C
	3.69	4.2	mA	+85°C
	3.89	4.6	mA	+125°C

Table 33-14. DC Characteristics: Comparator + DAC Delta Current
DC Characteristics	Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Parameter No.	Typ.	Max.	Units	Conditions
DC130	1.2	1.35	mA	-40°C, 3.3V	AF_PLLO @ 500 MHz⁽¹⁾
	1.23	1.65	mA	+25°C, 3.3V
	1.23	1.65	mA	+85ºC, 3.3V
	1.24	1.65	mA	+125°C, 3.3V
Note: APLL current is not included. Listed delta currents are for only one comparator + DAC instance. All parameters are characterized but not tested during manufacturing.

Table 33-15. Op Amp Delta Current⁽¹⁾
Parameter No.	Typ.	Max.	Units	Conditions
DC140	0.25	1	mA	-40°C	3.3V
	0.27	1.1	mA	+25°C
	0.32	1.4	mA	+85°C
	0.4647	1.7	mA	+125°C
Note: Listed delta currents are for only one op amp instance. All parameters are characterized but not tested during manufacturing.

Table 33-16. I/O Pin Input Specifications
Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Param  No.	Symbol	Characteristic	Min.	Typ.⁽¹⁾	Max.	Units	Conditions
	V_IL	Input Low Voltage
DI10		Any I/O Pin and MCLR	V_SS	—	0.2 V_DD	V
		I/O Pins with SDAx, SCLx	V_SS	—	0.3 V_DD	V	SMBus disabled
		I/O Pins with SDAx, SCLx	V_SS	—	0.8	V	SMBus enabled
		I/O Pins with SDAx, SCLx	V_SS	—	0.8	V	SMBus 3.0
	V_IH	Input High Voltage
DI20		I/O Pins Not 5V Tolerant⁽³⁾	0.8 V_DD	—	V_DD	V
		5V Tolerant I/O Pins and MCLR⁽³⁾	0.8 V_DD	—	5.5	V
		5V Tolerant I/O Pins with SDAx, SCLx⁽³⁾	0.8 V_DD	—	5.5	V	SMBus disabled
		5V Tolerant I/O Pins with SDAx, SCLx⁽³⁾	2.1	—	5.5	V	SMBus enabled
		5V Tolerant I/O Pins with SDAx, SCLx⁽³⁾	1.35	—	5.5	V	SMBus 3.0
		I/O Pins with SDAx,  SCLx Not 5V Tolerant⁽³⁾	0.8 V_DD	—	V_DD	V	SMBus disabled
		I/O Pins with SDAx,  SCLx Not 5V Tolerant⁽³⁾	2.1	—	V_DD	V	SMBus enabled
		I/O Pins with SDAx, SCLx Not 5V Tolerant⁽³⁾	1.35	—	V_DD	V	SMBus 3.0
DI30	I_CNPU	Input Change Notification  Pull-up Current^(2,4)	175	360	545	µA	V_DD = 3.6V, V_PIN = V_SS
DI31	I_CNPD	Input Change Notification  Pull-Down Current⁽⁴⁾	65	215	360	µA	V_DD = 3.6V, V_PIN = V_DD
Note: Data in “Typ.” column are at 3.3V, +25°C unless otherwise stated. Negative current is defined as current sourced by the pin. See the Pin Diagram section for the 5V tolerant I/O pins. All parameters are characterized but not tested during manufacturing.

Table 33-17. I/O Pin Input Specifications
Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Param  No.	Symbol	Characteristic	Min.	Max.	Units	Conditions
DI50	I_IL	Input Leakage Current⁽¹⁾
		I/O Pins 5V Tolerant⁽²⁾	-700	+700	nA	V_PIN = V_SS or V_DD
		I/O Pins Not 5V Tolerant⁽²⁾	-700	+700	nA
		MCLR	-700	+700	nA
		OSCI	-700	+700	nA	XT and HS modes
Note: Negative current is defined as current sourced by the pin. See the Pin Diagram section for the 5V tolerant I/O pins. All parameters are characterized but not tested during manufacturing.

Table 33-18. I/O Pin Input Injection Current Specifications
Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Param  No.	Symbol	Characteristic	Min.	Max.	Units	Conditions
DI60a	I_ICL	Input Low Injection Current	0	-5^(1,4)	mA	All pins
DI60b	I_ICH	Input High Injection Current	0	+5^(2,3,4)	mA	All pins, except all 5V tolerant pins
DI60c	ΣI_ICT	Total Input Injection Current (sum of all I/O and control pins)⁽⁵⁾	-20	+20	mA	Absolute instantaneous sum of all ± input injection currents from all  I/O pins ( \| I_ICL \| + \| I_ICH \| ) ≤ ΣI_ICT
Note: V_IL Source < (V_SS – 0.3). V_IH Source > (V_DD + 0.3) for non-5V tolerant pins only. 5V tolerant pins do not have an internal high-side diode to V_DD, and therefore, cannot tolerate any  “positive” input injection current. Injection currents can affect the ADC results. Any number and/or combination of I/O pins, not excluded under I_ICL or I_ICHconditions, are permitted in the sum.

Table 33-19. I/O Pin Output Specifications
Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Param.	Symbol	Characteristic	Min.	Typ.	Max.	Units	Conditions
DO10	V_OL	Output Low Voltage 4x Sink Driver Pins	—	—	0.42	V	V_DD = 3.6V, I_OL < 9 mA
DO10	V_OL	Output Low Voltage 8x Sink Driver Pins⁽¹⁾	—	—	0.4	V	V_DD = 3.6V, I_OL < 11 mA
DO20	V_OH	Output High Voltage 4x Source Driver Pins	2.4	—	—	V	V_DD= 3.6V, I_OH > -8 mA
DO20	V_OH	Output High Voltage 8x Source Driver Pins⁽¹⁾	2.4	—	—	V	V_DD = 3.6V, I_OH > -12 mA
Note: The 8x sink/source pins are RB1, RC8, RC9 and RD8 pins; all other ports are 4x sink drivers.

Table 33-20. Electrical Characteristics: BOR
DC Characteristics			Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated)⁽¹⁾ Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Param No.	Symbol	Characteristic	Min.	Typ.	Max.	Units	Conditions
BO10	V_BOR	BOR Event on V_DD Transition  High-to-Low	2.68	2.84	2.99	V	V_DD (Note 2)
Note: Device is functional at V_BORMIN < V_DD < V_DDMIN, but will have degraded performance. Device functionality is tested, but not characterized. Analog modules (ADC and comparators) may have degraded performance. Parameters are for design guidance only and are not tested in manufacturing.

Table 33-21. Program Memory
Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Param No.	Symbol	Characteristic	Min.	Max.	Units	Conditions
		Program Flash Memory
D130	E_P	Cell Endurance	10,000	—	E/W	-40°C to +125°C
D131	V_PR	V_DD for Read	3.0	3.6	V
D132b	V_PEW	V_DD for Self-Timed Write	3.0	3.6	V
D134	T_RETD	Characteristic Retention	20	—	Year	Provided no other specifications are violated, -40°C to +125°C
D137a	T_PE	Page Erase Time	15.3	16.82	ms	T_PE = 128,454 FRC cycles (Note 1)
D138a	T_WW	Word Write Time	47.7	52.3	µs	T_WW = 400 FRC cycles (Note 1)
D139a	T_RW	Row Write Time	2.0	2.2	ms	T_RW = 16,782 FRC cycles (Note 1)
Note: Other conditions: FRC = 8 MHz, TUN[5:0] = `011111` (for Minimum), TUN[5:0] = `100000` (for Maximum). This parameter depends on the FRC accuracy (see Table 33-27) and the value of the FRC Oscillator Tuning register (see OSCTUN). For complete details on calculating the Minimum and Maximum time, see AC Characteristics and Timing Parameters.

Table 33-22. Secure Subsystem Δ Current
Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial  -40°C ≤ T_A ≤ +125°C for Extended
Param No.	Symbol	Characteristic	Min.	Typ.⁽²⁾	Max.	Units	Conditions
D141	Iss_Active	Operating Current⁽¹⁾	—	13.02	—	mA	-40°C, 3.3V
			—	13.89	26	mA	+25°C, 3.3V
			—	14.17	—	mA	+85°C,3.3V
			—	14.11	—	mA	+125°C,3.3V
D142	Iss_Idle	Idle Current	—	5.05	—	mA	-40°C, 3.3V
			—	5.23	10	mA	+25°C, 3.3V
			—	5.42	—	mA	+85°C,3.3V
			—	5.7	—	mA	+125°C,3.3V
D143	Iss_Sleep	Sleep Current	—	3.13	—	μA	-40°C, 3.3V
			—	3.3	15	μA	+25°C, 3.3V
			—	3.56	—	μA	+85°C,3.3V
			—	4.42	—	μA	+125°C,3.3V
Note: This parameter can be measured by executing a command that generates a private or symmetric key using a random number generator. These values are characterized but not tested at manufacturing.