5 Flash Program Memory

Note: This data sheet summarizes the features of the dsPIC33CK512MPT608 family of devices. It is not intended to be a comprehensive reference source. To complement the information in this data sheet, refer to “Dual Partition Flash Program Memory” (www.microchip.com/DS70005156) in the “dsPIC33/PIC24 Family Reference Manual”.

Some registers and associated bits described in this section may not be available on all devices.

The dsPIC33CK512MPT608 family devices contain internal Flash program memory for storing and executing application code. The memory is readable, writable and erasable during normal operation over the entire VDD range.

Flash memory can be programmed in three ways:

  • In-Circuit Serial Programming™ (ICSP™) 
programming capability
  • Enhanced In-Circuit Serial Programming (Enhanced ICSP)
  • Run-Time Self-Programming (RTSP)

ICSP allows for a dsPIC33CK512MPT608 family device to be serially programmed while in the end application circuit. This is done with a Programming Clock and Programming Data (PGCx/PGDx) line, and three other lines for power (VDD), ground (VSS) and Master Clear (MCLR). This allows customers to manufacture boards with unprogrammed devices and then program the device just before shipping the product. This also allows the most recent firmware or a custom firmware to be programmed.

Enhanced In-Circuit Serial Programming uses an on-board bootloader, known as the Program Executive, to manage the programming process. Using an SPI data frame format, the Program Executive can erase, program and verify program memory. For more information on Enhanced ICSP, see the device programming specification.

RTSP allows the Flash user application code to update itself during run time. The feature is capable of writing a single program memory word (two instructions) or an entire row as needed.