39.26 NVM Block (Flash, Data Flash, NVM Configuration Rows) Electrical Specifications

Table 39-35. Flash NVM AC Electrical Specifications
AC CHARACTERISTICS				Standard Operating Conditions: VDD and VDDIO 2.7V to 5.5V (unless otherwise stated) Operating temperature: -40°C ≤ TA ≤ +85°C for Industrial
Param. No.	Symbol	Characteristics		Min.	Typ.	Max.	Units	Conditions
NVM_1	FRETEN	Flash Data Retention		20	—	—	Yrs	Under all conditions less than Absolute Maximum Ratings specifications
NVM_3	EP	Cell Endurance (Flash Erase and Write Operation)		25000	—	—	Cycles
NVM_5	FREAD	Flash Read	0 Wait States	—	—	20	MHz	VDDIO = 5.0V
			1 Wait States	—	—	38
			2 Wait States	—	—	48
			0 Wait States	—	—	19	MHz	VDDIO = 3.3V
			1 Wait States	—	—	38
			2 Wait States	—	—	48
NVM_7	TFPW	Program Cycle Time	Write Page⁽²⁾	—	—	2.5	ms	VDDIO = 3.3V
NVM_9	TCE		Erase Chip	—	—	0.26	sec
NVM_11	TFER		Erase Row	—	—	6	ms
NVM_13	IDDPROG	Supply Current during Programming		—	—	1.5	mA	VDDIO = 5.0V
NVM_15	IDDERASE	Supply Current during Erasing of a row		—	—	2.9	mA	VDDIO = 5.0V
Note: Maximum Flash operating frequencies are given in the table above, but are limited by the Embedded Flash access time when the processor is fetching code out of it. Theses tables provide the device maximum operating frequency defined by the RWS field of the NVMCTRL CTRLA register. This field defines the number of Wait states required to access the Embedded Flash Memory. For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.