46.27 Flash NVM Electrical Specifications

Table 46-36. Flash NVM Electrical Specifications
AC CHARACTERISTICS				Standard Operating Conditions: VDD and VDDIO 2.7V to 5.5V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial
Param. No.	Symbol	Characteristics		Min.	Typ.	Max.	Units	Conditions
NVM_1	F_RETEN	Flash Data Retention		20	—	—	Yrs	Under all conditions less than Absolute Maximum Ratings specifications
NVM_3	EP	Cell Endurance (Flash Erase and Write Operation)		25000	—	—	Cycles
NVM_5	F_READ	Flash Read ⁽¹⁾	0 Wait State	—	—	21	MHz	VDDIO = 5.0V
			1 Wait State	—	—	42
			2 Wait States	—	—	48
			0 Wait State	—	—	21	MHz	VDDIO = 3.3V
			1 Wait State	—	—	42
			2 Wait States	—	—	48
NVM_7	T_FPW	Program Cycle Time ⁽²⁾	Write Page	—	—	2.5	ms	VDDIO = 3.3V
NVM_9	T_CE		Erase Chip	—	—	0.26	sec
NVM_11	T_FER		Erase Row	—	—	10.5	ms
NVM_13	IDD_PROG	Supply Current during Programming of a page		—	—	1.5	mA	VDDIO = 5.0V
NVM_15	IDD_ERASE	Supply Current during Erasing of a row		—	—	2.9	mA	VDDIO = 5.0V

Note:

Maximum Flash operating frequencies are given in the table above, but are limited by the Embedded Flash access time when the processor is fetching code out of it. Theses tables provide the device maximum operating frequency defined by the field RWS of the NVMCTRL CTRLA register. This field defines the number of Wait states required to access the Embedded Flash Memory.
These values are based on simulation, and are not covered by test or characterization. For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.