43.12 Deep Sleep Current Consumption DC Electrical Specifications (125°C)

Table 43-13. Deep Sleep Current Consumption DC Electrical Specifications
DC Characteristics Standard Operating Conditions: VDDIO = VDDANA 1.9V to 3.6V (unless otherwise stated) Operating Temperature: -40°C ≤ TA ≤ +125°C for Extended Temp
Param. No. Symbol Characteristics VDDIO Typ.(1) Max. Units Conditions
BPWR_1 IDD_BACKUP(2)

MCU IDD in Deep Sleep mode powered from VDDIO

 3.3V 1.46 18.68 µA No backup RAM retained
BPWR_3 1.9V 1.09 13.12 µA
BPWR_9 3.3V 1.7 30.9 µA 8 KB backup RAM retained
BPWR_11 1.9V 1.34 25.17 µA 8 KB backup RAM retained
Note:
  1. Typical value measured during characterization across voltage and temperature.
  2. The test conditions are as follows:
    • All GPIO are input and pulled up.
    • All peripherals disabled with PMD bits.
    • All PB clocks are divided by 16.
    • LPRC is set as LPCLK.
    • SOSC and POSC is disabled.
    • CLDO configured at lowest possible voltage (VREG Trim = 0x07).
    • DSU is disconnected.
    • RF system is in low power configuration.
    • DSWDT is enabled and configured for wake-up.
    • Deep sleep entry is configured and WFI instruction is executed.

    • 8 KB RAM WCM memory ON using WCMCFG.WCM1CFG[2:0] = 1 ; WCMCFG.WCM2CFG[2:0] = 1 ; For powered ON, RET + NAP Mode.

    • 8 KB RAM WCM memory OFF using WCMCFG.WCM1CFG[2:0] = 0 ; WCMCFG.WCM2CFG[2:0] = 0 ; For powered OFF.

  3. These parameters are characterized but not tested in manufacturing.
Figure 43-9. Deep Sleep Current RAM ON
Figure 43-10. Deep Sleep Current RAM OFF